
RF & MICROWAVE TRANSISTORS
.470 - 860 MHz
.28 VOLTS
.CLASS AB PUSH PULL
. D ESI GN ED FOR H I GH PO WER L INEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.INTERNAL I NPUT MATCHING
.P
OUT
50 W MIN. WITH 6.5 dB GAIN
=
SD1489
TV/LINEAR APPLICATIONS
.438 x .450 2LF L (M173)
epoxy sealed
ORDER CODE
SD1489
PIN CONNECTION
BRANDING
SD1489
DESC RIPTIO N
The SD1489 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
UHF and Band IV, V television transmitters and
transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 3.0 V
Device Current 8 A
Power Dissipation 175 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
November 1992
1/5

SD1489
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CERIC
BV
CEOIC
BV
EBOIE
I
CEO
h
FE
= 50mA IE= 0mA 45 — — V
= 20mA RBE= 10Ω 40 — — V
= 200mA IB= 0mA 30 — — V
= 10mA IC= 0mA 3.0 — — V
VCE= 28V IE= 0mA — — 5 mA
VCE= 5V IC= 3A 10 — 80 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
C
C
OB
Note: Pulse Width= 10µSec, D uty Cycle= 1%
f = 860 MHz VCE= 28 V ICQ= 2x250mA 50 — — W
f=860 MHz VCE= 28 V ICQ= 2 x 250 mA 6.8 — — dB
P
f = 860 MHz VCE= 28 V ICQ= 2 x 250 mA — 45 — %
f = 1 MHz VCB= 28 V — 70 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/5

TYPICA L PERFO R MA NCE
OUTPUT POWER vs POWER INPUT BROADBAND POWER GAIN vs FREQUENCY
SD1489
INTERMODULATION DISTORTION
vs OUTPUT POWER
THERMAL RESISTANCE vs CASE
COLLECTOR EFFICIENCY vs FREQUENCY
TEMPERATURE
3/5

SD1489
TEST CIRCUIT
C1 : 1.5pF ATC 100A
C2, C’2 : 100pF ATC 100A
C3, C12 : .5 - 4.5pF Airtronic Adjustable
C4, C5 : 2.7pF ATC 100A
C6 : 10pF ATC 100A
C7 : 18pF ATC 100A
C8 : 6.8pF ATC 100A
C9 : 1.5pF ATC 100A + 1.8pF ATC 100A
C10, C’10 : 100pF ATC 100A
C11, C’11 : 120pF ATC 100A
Cd1 : 100pF ATC 100A
Cd2 : 47pF AATC 100B + 1000pF ATC 100B
Cd3 : 500µF 25V
Cd4 : 100pF ATC 100A
Cd5 : 22µF 35V
Cd6 : 1000pF ATC 100B
Cd7 : 47µF 63V
TEST CIRC UIT L AYO UT
L : Coaxial Cable Zo=50ΩLengthλ/4 at 680 MHz
L1 : Printed Transmissiion Line Zo
L2 : Printed Transmission Line Zo=25ΩLength 12mm
L3 : Printed Transmission Line Zo=25ΩLength 10mm
L4 : Printed Transmission Line Zo=25ΩLength 9mm
L5 : Printed Transmission Line Zo=25ΩLength 5.5mm
L6 : Printed Transmission Line Zo=25ΩLength 6mm
L7 : Printed Transmission Line Zo=25ΩLength 14.5mm
L8 : Printed Transmission Line Zo=25ΩLength 12mm
L9 : Printed Transmission Line Zo=25ΩLength 7mm
R1 : 150 Ω 1/4 W
R2 : 51 Ω 1/4W
S1, S’1 : 10 Turns of .35mm Wire on 2mm Diameter
S2 : 9 Turns of .35mm Wire on R1
S3 : 2 Turns of .8mm Wire on 4mm Diameter
S4 : 5 Turns of .8mm Wire on R2
Board: Er=2.55, .020” Thick
25ΩLength 12mm
=
4/5

PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0173
SD1489
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement ofpatents or other rights of third partieswhich may results from its use. No
license isgranted byimplication orotherwise under any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5