Datasheet SD1459 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

.170 - 230 MHz

.28 VOLTS

.COMMON EMITTER

.GOLD METALLIZATION

.HIGH SATURATED POWER CAPABILITY

.DIFFUSED EMITTER BALLAST

RESISTORS

. P

OUT

20 W MIN. WITH 7.5 dB GAIN

=

SD1459

TV/LINEAR APPLICATIONS

.500 Dia .550 4L STUD (M164)

epoxy sealed

ORDER CODE

SD1459

PIN CONNECTION

BRANDING

SD1459

DESC RIPTIO N

The SD1459 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
VHF and Band III television transmitters and trans­posers.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Uni t

V

CBO

V

CEO

V

EBO

I

C

P

DISS

T

J

T

STG

THERMA L DATA

R

TH(j-c)

Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 4.0 V
Device Current 16 A
Power Dissipation 150 W
Junction Temperature +200
Storage Temperature

Junction-Case Thermal Resistance 1.2 °C/W

case

= 25°C)

1. Collector 3. Base

2. Emitter 4. Emitter

65 to +150

−

°

C

°

C

September 9, 1993

1/5

SD1459

ELECTRICAL SPECIFICA TIONS (T

case

= 25°C)

STATIC

Symbol Test Conditions

BV

CBOIC

BV

CEOIC

BV

CERIC

BV

EBOIE

h

FE

= 100 mA IE= 0mA 60 — — V
= 100 mA IB= 0mA 30 — — V
= 100 mA RBE= 10Ω 60 — — V
= 20 mA IC= 0mA 4.0 — — V

VCE= 5V IC=1 A 10 — 120 —

DYNAMIC

Symbol Test Conditions

P

OUT

G

C

OB

Load

f = 225 MHz VCE= 28 V IC= 3.5 A 20 — — W
f = 225 MHz VCE= 28 V IC= 3.5 A 7.5 — 8.0 dB

P

f = 1 MHz VCB= 30 V — — 150 pf
f = 225 MHz VCE= 28 V IC= 3.5 A ∞:1 — — VSWR

Mismatch

Value

Min. Typ. Max.

Value

Min. Typ. Max.

Unit

Uni t

2/5

TYPICA L PERFORMA NCE

SD1459

OUTPUT POWER vs INPUT POWER

THERMAL RESISTANCE vs CASE

TEMPERATURE

INTERMODULATION DISTORTION vs

OUTPUT POWER

SAFE OPERATING AREA

3/5

SD1459

IMPEDA NCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

TYPICAL COLLECTOR

LOAD IMPEDANCE

FREQ. ZIN(Ω)ZCL(Ω)
170 MHz 0.6 + j 0.7 5.9 + j 3.5
200 MHz 0.55 + j 0.8 5.0 + j 3.0
230 MHz 0.5 + j 0.9 4.2 + j 2.8

Z

Z

CL

Z

IN

CL

TEST CIRCUIT FOR 225 MHz

C1, C10 : 470 pF ATC 100 B Chip Capacitor
C2 : 4 - 40pF Arco 403 Trimmer Capacitor
C3 : 4 - 60pF Arco 404 Trimmer Capacitor
C4, C5 : 82pF ATC 100B Chip Capacitor
C6 : 24 - 200pF Arco 425 Trimmer Capacitor
C7 : 10 - 80pF Arco 405 Trimmer Capacitor
C8, C11 : 1µF LCC Chip Capacitor
C9 : 100µF 63V Electrolytic
C12 : 10mF LCC CPM13B

L1 : 1 1/2 Turns, 0.7mmEnameled Wire 4.5mm I.D.
L2 : 21mm 50Ω Line
L3 : Length of theBase Lead
L4 : Enameled Wire 1.6mmDiameter
L5 : Enameled Wire 1.6mmDiameter
L6 : 9 Turns 0.7mm Enameled Wire 4.5mm 1.D.

Material: Epoxy 63 Mils Er=2.55

4/5

PACKAGE MECHANICAL DATA

Ref.: Dwg. No.12-0164

SD1459

Information furnishedis believed tobe accurate and reliable. However, SGS-THOMSONMicroelectronics assumesno responsability forthe
consequences of use ofsuch informationnor forany infringementof patents or other rights of third parties which mayresults fromits use. No
license isgrantedby implication orotherwise under anypatent orpatentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice.This publicationsupersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin life supportdevicesor systems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.

 1994 SGS-THOMSON Microelectronics- All RightsReserved

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5/5