Page 1
RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.25 VOLTS
.IMD − 55dB
. COMMON EMITTER
.GOLD METALLIZATION
.HIGH SATURATED POWER CAPABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. D ESI GN ED FOR HIGH POWER LINEAR
OPERATION
.P
OUT
20 W MIN. WITH 8.0 dB GAIN
=
SD1455
TV/LINEAR APPLICATIONS
.500 4L ST UD (M130)
epoxy sealed
ORDER CODE
SD1455
PIN CONNECTION
BRANDING
SD1455
DESC RIPT ION
The SD1455 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
VHF and Band III television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Emitter Voltage 35 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 4.0 V
Device Current 8.0 A
Power Dissipation 140 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
July 1993
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Page 2
SD1455
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CERIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 50 mA IE= 0mA 65 — — V
= 50 mA RBE= 10 Ω 60 — — V
= 50 mA IB= 0mA 35 — — V
= 10 mA IC= 0 mA 4.0 — — V
VCE= 50 V VBE= 0V — — 5 mA
VCE= 5V IC=1A 20 — 120 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
IMD3*P
C
OB
Note: * f=225 MHz
f = 225 MHz VCE= 25 V IC= 2.5 A 20 — — W
f = 225 MHz VCE= 25 V IC= 2.5 A 8.0 9.0 — dB
P
= 14 W VCE= 25 V IC= 2.5 A — −55 — dBc
OUT
f = 1 MHz VCB= 30 V — — 85 pF
3 Tone Testing
Vision Carrier −8dB/ref
Sound Carrier−7dB/ref
Sideband Carr ier −16dB / ref
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
INTERMODULATION DISTORTION
vs POWER OUTPUT
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Page 3
TYPICAL PERFORMANCE (CONT’D)
SD1455
THERMAL RESISTANCE v s CASE
TEMPERATURE
IMPEDA NCE DATA
SAFE OPERAITNG AREA
Z
CL
Z
IN
150 MHz 1.0 + j 1.0 9.0 + j 5.0
250 MHz 1.0 + j 2.0 6.0 + j 6.0
VCE= 28 V
IC= 2.5 A
Normalized to 50 Ohms
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FREQ. ZIN(Ω)ZCL(Ω)
Page 4
SD1455
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0130
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publicationsupersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany- HongKong - Italy - Japan - Korea - Malaysia -Malta -Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
4/4
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