Datasheet SD1434 Datasheet (SGS Thomson Microelectronics)

Page 1
.470 MHz
.12.5 VOLTS
.COMMON EMITTER
.P
45 W MIN. WITH 5.0 dB GAIN
=
SD1434
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLI CATION S
.500 6LF L (M111)
epoxy sealed
ORDER CODE
SD1434
PIN CONNECTION
BRANDING
SD1434
DESC RI PT ION
The SD1434 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffusedemit­ter resistors to achieve infinite VSWR under oper­ating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V Collector-Emitter Voltage 16 V Collector-Emitter Voltage 36 V Emitter-Base Voltage 4.0 V Device Current 10.0 A Power Dissipation 175 W Junction Temperature +200 Storage Temperature
Junction-Case Thermal Resistance 1.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Emitter
65 to +150
°
C
°
C
October 1992
1/5
Page 2
SD1434
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV BV BV
I
I
CES CBO
h
CBO
CES
CEO
EBO
FE
IC= 5mA IE= 0mA 36 V IC= 20mA VBE= 0V 36 V IC= 50mA IB= 0mA 16 V IE= 5mA IC= 0mA 4.0 V VCE= 22V IE= 0mA 5 mA VCB= 15V IE= 0mA 5 mA VCE= 5V IC= 1A 20 200
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
P
OB
f = 470 MHz PIN= 14 W VCE= 12.5 V 45 W f = 470 MHz PIN= 14 W VCE= 12.5 V 5 dB f = 1 MHz VCB= 12.5 V 130 pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY
2/5
Page 3
TYPICAL PERFO RM AN CE (cont ’d )
OUTPUT CAPACITANCE vs COLLECTOR
SD1434
BASE VOLTAGE
IMPEDA NCE DATA
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
3/5
Page 4
SD1434
TEST CIRCUIT
4/5
C1 : 10pF Unelco, 200 mil Sq. C2 : 36pF Unelco, 400 mil Sq. C3 : 34pF Unelco, 400 mil Sq. C4 : 36pF Unelco, 400 mil Sq. C5 : 38pF Unelco, 400 mil Sq. C6 : 16pF Unelco, 200 mil Sq. C7 : 10pF Unelco, 200 mil Sq. C8 : 25pF Unelco, 200 mil Sq. C9 : 1 - 12pF, ATC Variable C10 : 6pF Unelco, 200 mil Sq.
C11 : .01µF 50V, Erie Disc C12 : 1000pF Unelco, 400 mil Sq. C13 : 47µF 63V, Sprague Electrolytic C14 : 10pF Unelco, 200 mil Sq.
L1 : 27µH Molded L2 : 6 Turns, #18 AWG, .175”I.D.
Material : Pc Board, Double Sided Copper 1/32” Thick
Teflon-Glass, 3M-K-6098
Page 5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0111
SD1434
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes noresponsability forthe consequences of useof suchinformation nor for any infringementofpatents or other rights of third partieswhich mayresults from its use. No license isgranted by implicationor otherwise underany patent orpatentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned in this publication aresubjectto changewithout notice. This publication supersedes andreplacesall information previously supplied. SGS-THOMSON Microelectronicsproducts arenotauthorized foruse ascritical componentsin lifesupport devicesorsystems withoutexpress written approvalofSGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany- HongKong - Italy- Japan - Korea - Malaysia - Malta - Morocco -The Netherlands-
Singapore - Spain - Sweden- Switzerland-Taiwan - Thailand - United Kingdom -U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
5/5
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