Page 1
.470 MHz
.12.5 VOLTS
.CLASS C
. EFFICIENCY 60%
.COMMON EMITTER
.P
OUT
10 W MIN. WITH 8.0 dB GAIN
=
SD1433
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLI CATION S
.280 4L ST UD (M122)
epoxy sealed
ORDER CODE
SD1433
PIN CONNECTION
BRANDING
SD1433
DESC RIPT ION
The SD1433 is a Class C epitaxial silicon NPN
planar transistor designed for driver applications
in the 450 - 512 MHz frequency range. This device
uses an emitter ballasted geometry specifically designed for optimum stable power gain, maximum
efficiency and infinite VSWR.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 2.5 A
Power Dissipation 58 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 3.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
Page 2
SD1433
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
I
CES
CBO
h
CES
CEO
EBO
FE
IC= 25m A VBE= 0V 36 — — V
IC= 20mA IB= 0mA 16 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 10V IE= 0mA — — 3 mA
VCB= 15V IE= 0mA — — 2 mA
VCE= 5V IC= 1A 10 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
P
OB
f = 470 MHz PIN= 2.0 W VCE= 12.5 V 10 — — W
f = 470 MHz P
= 10 W VCE= 12.5 V 7 — — dB
OUT
f = 1 MHz VCB= 12.5 V — 19 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
POWER G AIN & EFFICIENCY
vs POWER INPUT
2/5
Page 3
IMPEDA NCE DATA
SD1433
TYPICAL INPUT IMPEDANCE
FREQ. ZIN(Ω)ZCL(Ω)
470 MHz 1.5 − j2.7 5.7+j1.5
TYPICAL COLLECTOR
LOAD IMPEDANCE
3/5
Page 4
SD1433
TEST CIRCUIT
4/5
C1, C2 : 0.8pF Voltronics
C3 : 18pF Chip Capacitor
C4, C5 : AJ810
C6 : 1000pF Chip Capacitor
C7 : 0.01µF Disc Ceramic
C8, C9 : 1000pF Unelco
C10 : 10µF, 35V Electrolytic
L1 : 0.47µH Molded Choke
L2 : 2 Turns, #20 AWG, 1/8” I.D.
L3 : 2 Turns in Ferroxcube VK200/19-4B
Board
Material: 3M-K6098, 1/16” Thick
Page 5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0122
SD1433
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publicationsupersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany- HongKong - Italy - Japan - Korea - Malaysia -Malta -Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
5/5
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