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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1406
DESCRIPTION ·
·With TO-220Fa package
·Collector power dissipation
=25W@TC=25℃
:P
C
·Low collector saturation voltage
·Complement to type 2SB1015
APPLICATIONS
·For audio frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 60 V
CBO
V
Collector -emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current 3 A
IB Base current 0.5 A
PC Collector power dissipation
℃)
Ta=25℃ 2.0
W
TC=25℃ 25
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1406
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A; VCE=5V 3 MHz
COB Collector output capacitance IE=0 ;f=1MHz ; VCB=10V 70 pF
Switching times
ton Trun-on time 0.8
Collector-emitter breakdown voltage IC=50mA; IB=0 60 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 0.25 1.0 V
Base-emitter voltage IC=0.5A ; VCE=5V 0.7 1.0 V
Collector cut-off current VCB=60V; IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
DC current gain IC=0.5A ; VCE=5V 60 300
DC current gain IC=3A ; VCE=5V 20
μA
μA
μs
=15Ω;VCC=30V
R
ts Storage time 1.5
tf Fall time
h
Classifications
FE-1
L
=-IB2=0.2A
I
B1
0.8
O Y GR
60-120 100-200 150-300
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1406
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1406
4
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