.470 MHZ
.24 VOLTS
.EFFICIENCY 50% MIN.
.P
OUT =
15W WITH11.0dBMIN.GAIN
.CLASS AB
. COMMON EMITTER
SD1391
RF & MICROWAVE TRANSISTORS
UHF BASE ST ATION APPLIC ATIONS
P RE LIMINARY DATA
.230 x .360 6LFL (M142)
OR DER CODE
SD1391
PI N CONNECTI O N
DESCRIP TION
The SD1391 is a goldmetallized NPNplanar transistor using diffused emitter ballast resistors for
reliability and ruggedness.
The SD1391 is specifically designed as a low
power, high gain driver and can be operated in
Class A, B or C.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-BaseVoltage 48 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3.5 V
Collector Current 2.5 A
Power Dissipation (+25°C) 29 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base
− 65 to +150
BRANDING
SD1391
°
C
°
C
THERMAL DATA
R
TH(j-c)
August 23, 1996
Junction-CaseThermal Resistance 6.0 °
C/W
1/5
SD 1391
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Tes t Conditions
BV
BV
BV
I
CBO
h
CBO
CEO
EBO
FE
IC= 50 mA IE= 0mA
IC= 20 mA IB= 0mA
IE= 5mA IC= 0mA
VCB= 24 V IE= 0mA
VCE= 10 V IC= 0.1 A
DYNAMIC
Symbol Test Conditions
P
OUT f = 470 MHz P
η
C f=470 MHz P
R
TL f = 470 MHz P
C
OB f = 1 MHz V
=6.3W VCC= 24V ICQ=50mA
IN
=6.3W VCC= 24V ICQ=50mA
IN
=6.3W VCC= 24V ICQ=50mA
IN
= 24 V
CB
Value
Min. Typ. Max.
Un it
48 — — V
25 — — V
3.5 — — V
— — 1.0 mA
10 — 100 —
Va lue
Min. Typ. Max.
Un it
15——W
50 60 %
10 — dB
——24pF
2/5
SD1391
POWER GAIN vs FREQUENCY
EFFICIENCY vs FREQUENCY
OUTPUT POWER vs INPUT POWER
INPUT RETURN LOSS vs FREQUENCY
3/5
SD 1391
TEST CIRCUIT
C1 : 2200pf Chip Capacitor
C2 : 22pf Chip Capacitor + 2-10pf Trim Capacitor
C3 : 2 x 33pf + 2-22pf Trim Capacitor
C5 : 8.2pf + 2-10pf TrimCapacitor
C6 : 330pf Chip Capac itor
C7,C8 :1nF + 10nF + 100nF + 10mF
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR LOAD
IMPEDANCE
L1 : 50 ohms microstrip line,L = 6mm
L2 : 50 ohms microstrip line,L = 19mm
L3 : 50 ohms microstrip line,L = 25mm
L4 : 50 ohms microstrip line,L = 14mm
L5 : 50 ohms microstrip line,L = 20mm
L6 : 50 ohms microstrip line,L = 7.5mm
L7 : 50 ohms microstrip line,L = 8.5mm
L8,L9 : 5 Turns, ID = 33mm, 0.5mm Wire diameter
Board Material: Teflon H = 30mils, Er = 2.55
FREQ.
420 MHz 4.0 + j 2.2
(Ω)Z
Z
IN
CL
7.2 + j 1.0
(Ω)
450 MHz 5.4 + j 3.9 6.8 + j 3.0
470 MHz 4.9 + j 5.7 6.6 + j 4.3
Z
CL
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. N o. 12-0142 rev. C
UDCS No. 1010968
SD1391
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan -
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Thailand - United Kingdom - U.S.A.
5/5
Loading...