Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1348
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SB986
·High current capacity
APPLICATIONS
·Power supplies,relay drivers,lamp
drivers,electrical equipment
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
ICM Collector current-peak 6 A
PD Total power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 6 V
℃)
Ta=25℃ 1.2
=25℃ 10
T
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1348
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage IC=2.0A; IB=0.1A 0.5 V
Base-emitter saturation voltage IC=2.0A; IB=0.1A 1.2 V
Collector cut-off current VCB=40V; IE=0 1.0 mA
=1.0mA ;RBE=∞
C
I
=10μA ;IC=0
E
I
=10μA ;IE=0
C
50 V
6 V
60 V
I
Emitter cut-off current VEB=4V; IC=0 1.0 mA
EBO
h
DC current gain IC=100mA ; VCE=2V 100 560
FE-1
h
DC current gain IC=3A ; VCE=2V 40
FE-2
fT Transition frequency IC=50mA ; VCE=10V 150 MHz
COB Collector output capacitance f=1MHz ; VCB=10V 25 pF
h
Classifications
FE-1
R S T U
100-200 140-280 200-400 280-560
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1348
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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