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.160 MHz
.13.6 VOLTS
.COMMON EMITTER
.P
OUT
40 W MIN. WITH 9.0 dB GAIN
=
SD1275-01
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
.380 4LF L (M113)
epoxy sealed
ORDER CODE
SD1275-01
PIN CONNECTION
BRANDING
SD1275-1
DESCRIPTI ON
The SD1275-01 isa13.6 VClassCepitaxial silicon
NPN planar transistor designed primarily for VHF
communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load
mismatch conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 8.0 A
Power Dissipation 70 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
June 1993
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Page 2
SD1275-01
ELECTRICAL SPECIF ICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
CEO
EBO
CBO
h
FE
IC= 15mA VBE= 0mA 36 — — V
IC= 50mA IB= 0mA 16 — — V
IE= 5mA IC= 0mA 4.0 — — V
VCB= 15V IE= 0mA — — 5 mA
VCE= 5V IC= 250mA 20 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
P
OB
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 40 — — W
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 9 — — dB
f = 1 MHz VCB= 15 V — 95 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER GAIN vs FREQUENCY POWER OUTPUT vs POWER INPUT
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Page 3
TYPICAL PERFO RM AN CE (cont ’d )
SD 1275-01
POWER OUTPUT vs SUPPLY VOLTAGE
(175 MHz)
POWER OUTPUT vs SUPPLY VOLTAGE
(160 MHz)
POWER OU T PU T vs SUPPLY VOLT A GE
(145 MHz)
IMPEDA NCE DATA
FREQ. ZIN(Ω)Z
160 MHz 1.0 + j 0.4 2.3 + j 0.1
PIN= 3.0 W
VCE= 12.5 V
CL
(Ω)
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Page 4
SD1275-01
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0113
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequences of useof suchinformationnor for any infringement ofpatents orotherrightsof third parties which may results from its use. No
license isgranted by implicationor otherwise underany patent orpatentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubjectto changewithoutnotice.This publication supersedes and replacesallinformationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorized foruse ascritical componentsin lifesupport devicesorsystems withoutexpress
written approvalofSGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany- HongKong - Italy-Japan- Korea - Malaysia-Malta -Morocco-The Netherlands-
Singapore - Spain - Sweden- Switzerland -Taiwan -Thailand-UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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