Datasheet SD 1266 Datasheet (INCHANGE)

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1266 2SD1266A

DESCRIPTION

·With TO-220Fa package

·High forward current transfer ratio h

which has satisfactory linearity

·Low collector saturation voltage

·Complement to type 2SB941/941A

APPLICATIONS

·For power amplification

PINNING

PIN DESCRIPTION

FE

1

2 Collector

3 Emitter

Base

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SD1266 60

V

CBO

V

CEO

V

EBO

IC Collector current 3 A

ICM Collector current-peak 5 A

PC Collector power dissipation

Collector-base voltage

2SD1266A 2SD1266 60

Collector-emitter voltage

2SD1266A

Emitter-base voltage Open collector 6 V

Open emitter

Open base

Ta=25℃ TC=25℃

V

80

V

80

2

W

35

Tj Junction temperature 150

T

Storage temperature -55~150

stg

℃ ℃

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1266 2SD1266A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

CEO

V

CEsat

V

BE

I

EBO

I

CEO

I

CES

h

FE-1

h

FE-2

fT Transition frequency IC=0.5A; VCE=10V,f=10MHz 30 MHz

Switching times

Collector-emitter voltage

Collector-emitter saturation voltage IC=3A, IB=0.375A 1.2 V

Base-emitter voltage IC=3A ; VCE=4V 1.8 V

Emitter cut-off current VEB=6V; IC=0 1 mA

Collector cut-off current

DC current gain IC=1A ; VCE=4V 70 250

DC current gain IC=3A ; VCE=4V 10

2SD1266 60

I

=30mA ,IB=0

C

2SD1266A

2SD1266 VCE=30V; IB=0

2SD1266A V

2SD1266 VCE=60V; VBE=0

2SD1266A VCE=80V; VBE=0

=60V; IB=0

CE

80

0.3 mA

0.2 mA

V

ton Turn-on time 0.5 μs

I

=1A

C

=0.1A ,IB2=-0.1A

t

Storage time 2.5 μs

stg

tf Fall time

 h

Classifications

FE-1

I

B1

V

CC

=50V,

0.4 μs

Q P

70-150 120-250

2

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1266 2SD1266A

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)

3

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1266 2SD1266A

4