Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1138
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SB861
APPLICATIONS
·Low frequency high voltage power
amplifier
TV vertical deflection output
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICP Collector current-peak
PC Collector power dissipation
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 6 V
℃)
Ta=25℃
T
=25℃
C
5 A
1.8
W
30
Tj Junction temperature 150
T
Storage temperature -45~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1138
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter voltage IC=50mA ; VCE=4V 1.0 V
I
CBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ;VCB=100V,f=1MHz 20 pF
Collector-emitter breakdown voltage IC=50mA; RBE=∞ 150 V
Emitter-base breakdown votage IE=5mA; IC=0 6 V
Collector-emitter saturation voltage IC=0.5 A;IB=50m A 3.0 V
Collector cut-off current VCB=120V; IE=0 1 μA
DC current gain IC=50mA ; VCE=4V 60 320
DC current gain IC=0.5A ; VCE=10V 60
h
classifications
FE-1
B C D
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1138
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1138
4
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