Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1062
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SB826
·Wide area of safe operation
APPLICATIONS
·Relay drivers,
·High-speed inverters,
·Converters
·General high-current switching
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 12 A
ICM Collector current-peak 15 A
PC Collector power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
40 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1062
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=5V 10 MHz
Switching times
ton Turn-on time 0.10 μs
ts Storage time 0.05 μs
Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V
Collector-base breakdown voltage IC=1mA ;IE=0 60 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=6A, IB=0.3A 0.4 V
Collector cut-off current VCB=40V;IE=0 0.1 mA
Emitter cut-off current VEB=4V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=2V 70 280
DC current gain IC=5A ; VCE=2V 30
=5.0A IB1=- IB2=0.5A
I
C
tf Fall time
h
70-140 100-200 140-280
classifications
FE-1
Q R S
2
1.20 μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1062
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1062
4
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