Page 1
SEMICONDUCTOR
KTD1047
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
ᴌComplementary to KTB817.
ᴌRecommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Collector Power Dissipation (Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
160 V
140 V
6 V
12
15
100 W
150
-55ᴕ150
ᴱ
ᴱ
TRIPLE DIFFUSED NPN TRANSISTOR
A
E
D
d
P
123
A
Q
F
J
PT
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
K
I
C
H
G
L
M
MILLIMETERSDIM
A 15.9 MAX
B 4.8 MAX
C 20.0 0.3
D 2.0 0.3
d 1.0+0.3/-0.25
E2.0
F1.0
G 3.3 MAX
H9.0
I4.5
J
K 1.8 MAX
L 20.5 0.5
P 5.45 0.2
Q
T 0.6+0.3/-0.1
_
+
_
+
2.0
_
+
2.8M
_
+
_
Φ3.2 0.2
+
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Output Capacitance
Turn On Time
Fall Time
Storage Time
Note : hFE(1) Classification O:60ᴕ120, Y:100ᴕ200
I
CBO
I
EBO
h
(1) (Note) VCE=5V, IC=1A
FE
h
FE
V
CE(sat)
V
BE(ON)
C
t
t
VCB=80V, IE=0
VEB=4V, IC=0
2 VCE=5V, IC=6A
IC=5A, IB=0.5A
VCE=5V, IC=1A
f
T
ob
on
t
f
stg
VCE=5V, IC=1A
VCB=10V, IE=0, f=1MHz
VCC=20V
I
=1A=10ᴌIB1=-10ᴌI
C
RL=20ή
- - 0.1 mA
- - 0.1 mA
60 - 200
20 -
- - 2.5 V
- - 1.5 V
- 15 - MHz
- 210 - pF
- 0.26 -
B2
- 0.68 -
ỌS
- 6.88 -
1999. 11. 16 1/3
Revision No : 1
Page 2
KTD1047
I - V
CCE
10
8
C
6
240mA
200mA
160mA
120mA
80mA
4
2
COLLECTOR CURRENT I (A)
0
0
10 20 30 40 50
COLLECTOR EMITTER VOLTAGE V (V)
V - I
CE(sat)
10
5
3
1
0.5
0.3
CE(sat)
V (V)
0.1
0.05
0.03
COLLECTOR-EMITTER VOLTAGE
0.01
0.1
0.3 1
0.5
COLLECTOR CURRENT I (A)
40mA
C
35 10
C
20mA
I =0
B
CE
I /I =10
C
B
1k
500
300
FE
100
50
30
10
DC CURRENT h
5
3
1
COLLECTOR CURRENT I (A)
V - I
BE(sat)
10
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1 0.3 31
0.5 5
COLLECTOR CURRENT I (A)
h - I
FE
310.30.1
C
V =5V
CE
10 30 100
C
C
I /I =10
C
B
C
10
f - I
T
I - V
C
BE
8
V =5V
CE
7
C
6
100
50
T
30
C
V =5V
CE
5
4
3
2
1
COLLECTOR CURRENT I (A)
0
0
1999. 11. 16 2/3
0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE V (V)
BE
Revision No : 1
10
5
3
1
TRANSITION FREQUENCY f (MHz)
130.30.1
0.5 5
COLLECTOR CURRENT I (A)
10
C
Page 3
KTD1047
k
C - V
ob CB
1k
500
300
100
ob
C (pF)
50
30
COLLECTOR OUTPUT CAPACITANCE
10
1
3 3 0 100
COLLECTOR-BASE VOLTAGE V (V)
10
f=1MHz
CB
SAFE OPERATING AREA
100
50
30
C
10
5
3
1
0.5
0.3
COLLECTOR CURRENT I (A)
0.1
COLLECTOR-EMITTER VOLTAGE V (V)
DC
100m
301031
1mS
10mS
S
100 300 1
CE
1999. 11. 16 3/3
Revision No : 1
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