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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance.
Fast switching speed.
Low voltage drive makes this device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.
EQUIVALENT CIRCUIT
SCG3019
N-Channel Enhancement MOSFET
SOT-523
Millimeter
REF.
Min. Max. Min. Max.
A 1.50 1.70 K 0.30 0.50
B 0.75 0.95 M --- 10
C 0.60 0.80 N --- 10
D 0.23 0.33 S 1.50 1.70
G 0.50BSC
J 0.10 0.20
REF.
Millimete
MAXIMUM RATINGS (T
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current ID 0.1 A
Total Power Dissipation P
Operating Junction Temperature Range TJ 150 °C
=25℃ unless otherwise specified)
A
PARAMETER SYMBOL RATING UNIT
30 V
DSS
±20 V
GSS
0.15 W
D
Operating Storage Temperature Range T
Thermal Resistance, Junction to Ambient R
-55~150 °C
STG
833 °C / W
θJA
DEVICE MARKING
KN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-May-2010 Rev. A Page 1 of 4
Page 2
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SCG3019
Elektronische Bauelemente
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
CHARACTERISTICS SYMBOL MIN TYP MA
Off Characteristics
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate-Source Leakage I
Gate Threshold Voltage V
Static Drain-Source On Resistance R
DSS
- - 1 μA V
DSS
- - ±1 μA VGS= ±20V, VDS=0V
GSS
GS(th)
DS(ON)
Forward transfer admittance gfs 20 - - mS VDS= 3V, ID = 10mA
Dynamic Characteristics
Input Capacitance C
Reverse Transfer Capacitance C
- 13 -
iss
- 9 -
oss
- 4 -
rss
Switching Characteristics
Turn-On Delay Time T
d(ON)
30 - - V V
0.8 - 1.5 V VDS= 3V, ID=100μA
- - 8
- - 13 VGS= 2.5V, ID = 1mA
- 15 -
UNIT TEST CONDITIONS
= 0V, ID = 10μA
GS
= 30V, VGS = 0V
DS
V
= 4V, ID = 10mA
GS
Ω
pF V
DS
= 5V, VGS= 0V, f= 1MHz Output Capacitance C
Rise Time Tr - 35 -
nS
Turn-Off Delay Time T
- 80 -
d(OFF)
Fall Time Tf - 80 -
= 5V, VDD= 5V, ID= 10mA,
V
GS
RG= 10Ω, RL= 500Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-May-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SCG3019
N-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-May-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SCG3019
N-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-May-2010 Rev. A Page 4 of 4
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