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Product Description
SCA-7
Stanford Microdevices’ SCA-7 is a high performance Gallium
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products.
Typical IP3 at 40mA is +24dBm.
These unconditionally stable amplifiers provides 21dB of gain
and +12dBm of 1dB compressed power and requires only a
single positive voltage supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation.
Product Features
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
• High Output IP3 : +24dBm
• High Gain : Up to 21dB
• Cascadable 50 Ohm : 1.5:1 VSWR
Output IP3 vs. Frequency
30
28
26
dBm
24
22
20
0.1123
GHz
• Patented GaAs HBT Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular , PCS, CDPD
• Wireless Data, SONET
Electrical Specifications at Ta = 25C
Symbol
G
G
P
NF Noise Figure f = 0.1-3.0 G Hz dB 3.8
IP
T
ISOL Reverse Isolation f = 0.1-3.0 G Hz dB 22
VD Device Voltage V 3.5 4.0 4.5
dG/dT Device Gain Tem perature Coefficient dB/degC -0.003
dV/dT Device Voltage Tem perature Coefficient mV /degC -4.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
P aram e ters: Te st C on dition s:
Id = 40mA , Z
Power Gain
P
Gain Flatness
F
Gain Flatness over any 100 MH z band
Output Power at 1dB Com pression: f = 0.1-2.0 G Hz dBm 12.0
1dB
Third O rder Intercept Point
3
Output Tone @ 0dBm 10 M Hz Apart
Group Delay f = 1.9 GHz psec 100
D
= 50 Ohm s
0
f = 0.1-2.0 G Hz
f = 2.0-3.0 G Hz
f = 0.1-2.0 G Hz
f = 0.1-2.0 G Hz dBm 23.0 24.0
Units Min. Ty p . M ax.
dB
dB
dB
dB
5-125
18 20
18
+/- 1.2
+/- 0.1
50 Ohm Gain Blocks
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SCA-7 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 4.0V , Ids = 40mA)
°°
0
-5
-10
dB
-15
-20
0.1 1 2 3
|S12| vs. Frequency
|S11| vs. Frequency
-20
-22
-24
dB
-26
-28
-30
0.1 1 2 3
50 Ohm Gain Blocks
GHz
GHz
28
24
dB
20
16
0.1 1 2 3
0
-5
-10
dB
-15
-20
0.1 1 2 3
Output Power vs.Frequency
14
13
12
dBm
11
10
1234
GHz
|S21| vs. Frequency
GHz
|S22| vs. Frequency
GHz
Typical S-Parameters Vds = 4.0V, Id = 40mA
Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang
.100
.500
.900
1.00
1.50
2.00
2.50
3.00
0.338 117 13.126 139 0.064 -19 0.326 118
0.322 112 13.096 130 0.056 -25 0.317 113
0.310 61 12.333 93 0. 0 57 -46 0.320 64
0.305 47 12.165 83 0. 0 59 -50 0.320 51
0.271 -13 11.356 38 0.062 -79 0.316 -9
0.225 -71 10.626 -7 0.066 -107 0.3 07 -67
0.179 -129 9.175 -52 0.070 -1 38 0.298 -126
0.148 172 8.363 -90 0.073 -173 0.291 177
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-126
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SCA-7 DC-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Parameter
Device Current 75mA
Power Dissipation 350mW
R F Inp u t Po w e r 10 0 m W
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
Recommended Bias Resistor Values
Supply Voltage (Vs) 5V 7.5V 9V 12V 15V 20V
25 88 125 200 275 400
)
Rbias (Ohms
Absolute
Maximum
Mounting Instructions
The data shown was taken on a 31mil thick FR-4 board with
1 ounce of copper on both sides.
The board was mounted to a baseplate with 3 screws as shown.
The screws bring the top side copper temperature to the same
value as the baseplate.
1. Use 1 or 2 ounce copper, if possible.
2. Solder the copper pad on the backside of the device
package to the ground plane.
3. Use a large ground pad area with many plated through-holes
as shown.
4. If possible, use at least one screw no more than 0.2 inch
from the device package to provide a low thermal resistance
path to the baseplate of the package.
5. Thermal resistance from ground lead to screws is
2 deg. C/W.
MTTF vs. T emperature
@ Id = 40mA
Lead
Temperature
+85C 1,000,000
+120C 100,000
+150C 10,000
Thermal Resistance (Lead-Junction): 412 C/W
Typical Biasing Configuration
Outline Drawing
MTTF (hrs)
Pin Designation
1RF in
2GND
3 RF out and Bias
4GND
1
50 Ohm Gain Blocks
2
4
3
SCA-7
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-127
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