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Product Description
Stanford Microdevices’ SCA-5 is a high performance Gallium
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband
performance up to 3 GHz. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products.
Typical IP3 at 50mA is +29dBm.
These unconditionally stable amplifiers provides up to 12dB
of gain and +13.5dBm of 1dB compressed power and
requires only a single positive voltage supply. Only 2 DCblocking capacitors, a bias resistor and an optional inductor
are needed for operation.
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
SCA-5
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
• High Output IP3 : +29dBm
• Flat Gain : +/- 0.5dB Over Full Band
• Cascadable 50 Ohm : 1.5:1 VSWR
• Patented GaAsHBT T echnology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular , PCS, CDPD
• Wireless Data, SONET
Symbol
P ara m ete rs: Te st C on d ition s:
Id = 50m A, Z
0
= 50 O hms
Units Min. Ty p . M ax.
G
P
Power Gain
f = 0.1-2.0 GH z
f = 2.0-3.0 GH z
dB
dB
10 12
11
G
F
Gain Flatness
Gain Flatness over any 100 MHz band
f = 0.1-2.0 GH z
dB
dB
+/- 0.5
+/- 0.1
P
1dB
Output Power at 1dB C ompression f = 0.9 GHz dBm 13.5
NF N oise Figure f = 0.1-3.0 GH z dB 6.0
IP
3
Third Order Intercept Point
Output Tone @ 0dBm 10 M Hz Apart
f = 0.1-2.0 GH z dBm 29.0
T
D
Group Delay f = 1.9 GHz psec 100
ISO L Reverse Isolation f = 0.1-3.0 GH z dB 18
VD Device Voltage V 3.5 4.0 4.5
dG/dT Device Gain Temperature Coefficient dB/degC -0.0015
dV/dT Device Voltage Tem perature Coefficient m V/degC -4.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Electrical Specifications at Ta = 25C
Output IP3 vs. Frequency
20
22
24
26
28
30
0.1123
dBm
GHz
50 Ohm Gain Blocks
5-117
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|S11| vs. Frequency
|S21| vs. Frequency
|S12| vs. Frequency
|S22| vs. Frequency
Output Power vs. Frequency
Typical S-Parameters Vds = 4.0V, Id = 50mA
SCA-5 DC-3 GHz Cascadable MMIC Amplifier
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
-20
-15
-10
-5
0
0.1 1 2 3
10
12
14
16
0.1 1 2 3
-20
-18
-16
-14
-12
-10
0.1 1 2 3
-20
-15
-10
-5
0
0.1 1 2 3
dBm
dB
GHz
GHz
dB
dB
GHz
GHz
dB
GHz
Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang
.100
0.284 125 4.182 152 0.143 -24 0.235 131
.500
0.297 119 4.170 138 0.139 -33 0.249 119
.900
0.320 73 4.042 107 0. 1 35 -58 0.2 76 75
1.00
0.327 62 4.025 98 0.136 -6 4 0.285 63
1.50
0.354 8 3.948 60 0.1 33 -96 0.319 10
2.00
0.360 -4 4 3.983 21 0.130 -125 0.338 -4 3
2.50
0.344 -97 3.777 -20 0.133 -157 0.339 -97
3.00
0.307 -152 3.618 -55 0.137 -167 0.320 -151
50 Ohm Gain Blocks
Typical Performance at 25
°°
°°
°
C (Vds = 4.0V , Ids = 50mA)
11
12
13
14
15
0.1 1 2 3
5-118
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SCA-5 DC-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Device Current 75mA
Power Dissipation 350mW
R F Inp u t P ow e r 1 00 m W
Junction Temperature +200C
Operating Tem perature -45C to +85C
Storage Temperature -65C to +150C
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Typical Biasing Configuration
MTTF vs. T emperature
@ Id = 100mA
Lead
Temperature
MTTF (hrs)
+55C 1,000,000
+90C 100,000
+120C 10,000
50 Ohm Gain Blocks
Thermal Resistance (Lead-Junction): 510° C/W
Outline Drawing
Pin Designation
1RF in
2GND
3 RF out and Bias
4GND
Mounting Instructions
The data shown was taken on a 31mil thick FR-4 board with
1 ounce of copper on both sides.
The board was mounted to a baseplate with 3 screws as shown.
The screws bring the top side copper temperature to the same
value as the baseplate.
1. Use 1 or 2 ounce copper, if possible.
2. Solder the copper pad on the backside of the device
package to the ground plane.
3. Use a large ground pad area with many plated through-holes
as shown.
4. If possible, use at least one screw no more than 0.2 inch
from the device package to provide a low thermal resistance
path to the baseplate of the package.
5. Thermal resistance from ground lead to screws is
2 deg. C/W.
1
2
3
4
Recommended Bias Resistor Values
Supply Voltage (Vs) 5V 7.5V 9V 12V 15V 20V
Rbias (Ohms
)
20 70 100 160 220 320
5-119
SCA-5
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