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Product Description
y
Stanford Microdevices’ SCA-16 is a high performance Gallium
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier.
A Darlington configuration is utilized for broadband
performance up to 3 GHz. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products.
Typical IP3 at 50mA is +28dBm.
These unconditionally stable amplifiers provides 15dB of gain
and +14.5dBm of 1dB compressed power and requires only
a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for
operation.
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
Output IP3 vs. Frequency
32
30
28
dBm
26
24
22
0.1123
GHz
SCA-16
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
• High Output IP3 : +28dBm
• Flat Gain : +/- 0.7dB Over Full Band
• Cascadable 50 Ohm : 1.5:1 VSWR
• Patented GaAsHBT Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular, PCS, CDPD
• Wireless Data, SONET
50 Ohm Gain Blocks
Electrical Specifications at Ta = 25C
Symbol
G
G
P
NF Noise Figure f = 0.1-3.0 G Hz dB 5.5
VSW R Input and Output VSW R f = 0.1-3.0 G Hz - 1.5
IP
T
ISO L R everse Isolation f = 0.1-3.0 G Hz dB 20
VD D evice Voltage V 3 .5 4 .0 4.5
dG/dT Device Gain Temperature Coefficient dB/degC -0.0018
dV/dT D evice Voltage Temperature C oefficient m V/degC-4.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Param eters: Test Conditions:
Id = 50m A, Z
Power Gain
P
Gain Flatness
F
Gain Flatness over any 100 M Hz band
Output Power at 1dB C ompression f = 0.1-2.0 G Hz dBm 14.5
1dB
Third Order Intercept P oint
3
Output Tone @ 0dBm 10 MHz A part
Group Dela
D
= 50 O hms
0
f = 0.1-2.0 G Hz
f = 2.0-3.0 G Hz
f = 0.1-2.0 G Hz
f = 0.1-2.0 G Hz dBm 28.0
f = 1.9 GH z psec 100
Units Min. Typ . M ax.
dB
dB
dB
dB
5-149
13 15
14
+/- 0.7
+/- 0.1
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SCA-16 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 4.0V , Ids = 50mA)
°°
0
-5
-10
dB
-15
-20
0.1 1 2 3
|S12| vs. Frequency
|S11| vs. Frequency
-12
-16
dB
-20
-24
0.1 1 2 3
50 Ohm Gain Blocks
GHz
GHz
Output Power vs.Frequency
16
15
14
dBm
13
12
0.1 1 2 3
GHz
18
16
dB
14
12
0.1 1 2 3
GHz
|S22| vs. Frequency
0
-5
-10
dB
-15
-20
|S21| vs. Frequency
0.1 1 2 3
GHz
Typical S-Parameters Vds = 4.0V, Id = 50mA
Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang
.100
.500
.900
1.00
1.50
2.00
2.50
3.00
0.247 125 6.531 148 0.108 -42 0. 21 2 124
0.241 117 6.606 136 0.103 -31 0. 20 6 117
0.256 70 6.397 103 0.102 -55 0.228 71
0.260 58 6.362 93 0.103 -61 0.235 59
0.272 3 6.174 52 0. 10 2 -93 0.260 3
0.265 -50 6.078 10 0. 101 -122 0.273 -52
0.240 -104 5.63 8 -32 0.104 -153 0.27 4 -109
0.204 -160 5.343 -70 0.106 172 0.264 -167
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-150
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SCA-16 DC-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Parameter
Device Current 75mA
Power Dissipation 350mW
R F Inp u t Po w e r 1 0 0m W
Junction Tem perature +200C
Operating Tem perature -45C to +85C
Storage Temperature -65C to +150C
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
Recommended Bias Resistor Values
Supply Voltage (Vs) 5V 7.5V 9V 12V 15V 20V
20 70 100 160 220 320
)
Rbias (O hms
Absolute
Maximum
Mounting Instructions
The data shown was taken on a 31mil thick FR-4 board with
1 ounce of copper on both sides.
The board was mounted to a baseplate with 3 screws as shown.
The screws bring the top side copper temperature to the same
value as the baseplate.
1. Use 1 or 2 ounce copper, if possible.
2. Solder the copper pad on the backside of the device
package to the ground plane.
3. Use a large ground pad area with many plated through-holes
as shown.
4. If possible, use at least one screw no more than 0.2 inch
from the device package to provide a low thermal resistance
path to the baseplate of the package.
5. Thermal resistance from ground lead to screws is
2 deg. C/W.
MTTF vs. T emperature
@ Id = 50mA
Lead
Temperature
+55C 1,000,000
+90C 100,000
+120C 10,000
Thermal Resistance (Lead-Junction): 510° C/W
Typical Biasing Configuration
MTTF (hrs)
Pin Designation
1RF in
2GND
3 RF out and Bias
4GND
Outline Drawing
1
50 Ohm Gain Blocks
2
4
3
SCA-16
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-151
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