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Product Description
y
Stanford Microdevices’ SCA-15 is a high performance Gallium
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier.
A Darlington configuration is utilized for broadband
performance up to 3 GHz. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products.
Typical IP3 at 50mA is +27dBm.
These unconditionally stable amplifiers provides up to 12dB
of gain and +13.5dBm of 1dB compressed power and
requires only a single positive voltage supply. Only 2 DCblocking capacitors, a bias resistor and an optional inductor
are needed for operation.
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
Output IP3 vs. Frequency
30
28
26
dBm
24
22
20
0.1 1 2 3
GHz
SCA-15
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
• High Output IP3 : +27dBm
• Flat Gain : +/- 0.5dB Over Full Band
• Cascadable 50 Ohm : 1.5:1 VSWR
• Patented GaAs HBT Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular , PCS, CDPD
• Wireless Data, SONET
50 Ohm Gain Blocks
Electrical Specifications at Ta = 25C
Symbol
G
G
P
NF Noise Figure f = 0.1-3.0 GH z dB 6.0
VSW R Input and Output VSW R f = 0.1-3.0 GH z
IP
T
ISO L R everse Isolatio n f = 0.1-3.0 GH z dB 16
VD D evice Voltage V 3 .5 4 .0 4.5
dG/dT Device Gain Tem perature Coefficient dB/degC0.0015
dV/dT D evice Voltage Temperature Coefficient m V/degC-4.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
P aram e ters: Te st C on dition s:
Id = 50m A, Z
Power Gain
P
Gain Flatness
F
Gain Flatness over any 100 M Hz band
Output Power at 1dB Co mpression f = 0.1-2.0 GH z dBm 13.5
1dB
Third Order Intercept Point
3
Output Tone @ 0dBm 10 MH z Apart
Group Dela
D
= 50 Oh ms
0
f = 0.1-2.0 GH z
f = 2.0-3.0 GH z
f = 0.1-2.0 GH z
f = 0.1-2.0 GH z dBm 27.0
f = 1.9 GHz psec 100
Units Min. Ty p . M ax.
dB
dB
dB
dB
-
5-145
10 12
11
+/- 0.5
+/- 0.1
1.5
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SCA-15 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 4.0V , Ids = 50mA)
°°
0
-5
-10
dB
-15
-20
0.1 1 2 3
|S12| vs. Frequency
|S11| vs. Frequency
-10
-12
-14
dB
-16
-18
-20
0.1 1 2 3
50 Ohm Gain Blocks
GHz
GHz
Output Power vs. Frequency
16
15
14
dBm
13
12
0.1 1 2 3
GHz
16
14
dB
12
10
0.1 1 2 3
GHz
|S22| vs. Frequency
0
-5
-10
dB
-15
-20
|S21| vs. Frequency
0.1 1 2 3
GHz
Typical S-Parameters Vds = 4.0V, Id = 50mA
Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang
.100
.500
.900
1.00
1.50
2.00
2.50
3.00
0.284 125 4.182 152 0.143 -24 0.235 131
0.297 119 4.170 138 0.139 -33 0.249 119
0.320 73 4.042 107 0.135 -58 0.276 75
0.327 62 4.025 98 0.136 -64 0.2 85 63
0.354 8 3.948 60 0.133 -96 0.3 19 10
0.360 -44 3.983 21 0.130 -125 0.338 -4 3
0.344 -97 3.777 -20 0.133 -157 0.339 -97
0.307 -152 3.618 -55 0.137 -167 0.320 -151
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-146
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SCA-15 DC-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Parameter
Device Current 75mA
Power Dissipation 350mW
R F Inp u t Po w er 1 00 m W
Junction Temperature +200C
Operating Tem perature -45C to +85C
Storage Tempe rature -65C to +150C
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
Recommended Bias Resistor Values
Supply Voltage (Vs) 5V 7.5V 9V 12V 15V 20V
20 70 100 160 220 320
)
Rbias (O hms
Absolute
Maximum
Mounting Instructions
The data shown was taken on a 31mil thick FR-4 board with
1 ounce of copper on both sides.
The board was mounted to a baseplate with 3 screws as shown.
The screws bring the top side copper temperature to the same
value as the baseplate.
1. Use 1 or 2 ounce copper, if possible.
2. Solder the copper pad on the backside of the device
package to the ground plane.
3. Use a large ground pad area with many plated through-holes
as shown.
4. If possible, use at least one screw no more than 0.2 inch
from the device package to provide a low thermal resistance
path to the baseplate of the package.
5. Thermal resistance from ground lead to screws is
2 deg. C/W.
MTTF vs. T emperature
@ Id = 100mA
Lead
Temperature
+55C 1,000,000
+90C 100,000
+120C 10,00 0
Thermal Resistance (Lead-Junction): 510° C/W
Typical Biasing Configuration
Outline Drawing
MTTF (hrs)
Pin Designation
1RF in
2GND
3 RF out and Bias
4GND
1
2
4
3
50 Ohm Gain Blocks
SCA-15
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-147
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