Datasheet SCA-11 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SCA-11 is a high performance Gallium
Arsenide MESFET MMIC Amplifier. This device is fabricated
using Stanford’s reliable 0.5 micron gate MESFET process.

This amplifier is internally matched with typical VSWR of

1.6:1. Its positive gain slope makes it an ideal choice for
cascading multiple amplifiers without sacrificing high
frequency response.

These unconditionally stable amplifiers provides 10dB of gain
and +19dBm of 1dB compressed power and require only a
single positive 5-volt supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation.

This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.

SCA-1 1

0.3-3 GHz, Cascadable
GaAs MMIC Amplifier

Product Features

• High Output Power : +19dBm P1dB

• Very Flat Gain : +/-0.5dB from 0.3-2.0 GHz

• Cascadable 50 Ohm : 1.6:1 VSWR

• Low Noise Figure : 4.5dB T ypical

• Patented GaAsHBT T echnology

• Operates From Single Supply

• Low Thermal Resistance Package
Applications

• Cellular, PCS, CDPD, Wireless Data, SONET

Symbol

P ara m ete rs: Te st C o nd ition s:
VD = +5.0V , Z0 = 50 Ohm s

Units Min. Ty p . M ax.

G

P

Power Gain f = 0.3-3.0 GHz dB 8 10

G

F

Gain Flatness
Gain Flatness over an

y

100 M Hz band

f = 0.3-2.0 GHz dB

dB

+/- 0.5
+/- 0.1

P

1dB

Output Power at 1dB Com pression f = 0.3-3.0 GHz dBm +19

NF Noise Fi

g

ure f = 0.3-3.0 GHz dB 3.5

VSW R Input / Output f = 0.3-2.0 GHz - 1.5

IP

3

Third Order Intercept Point
Output Tones @ 0dBm 10 MH z apart

f = 0.3-2.0 GHz dBm 27

T

D

Group Dela

y

f = 1.9 GHz psec 100

ISO L Reverse Isolation f = 0.3-3.0 GHz dB 14

dG/dT D evice Gain Temperature Coefficient dB/de

g

C -0.0015

I

D

De vice C urrent

V

D

= +5.0V

m A 40 75 120

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Electrical Specifications at Ta = 25C

Output Power vs. Frequency

Vd= 5V, Id= 90mA

dBm

GHz

17

18

19

20

21

0.3123

50 Ohm Gain Blocks

5-129

|S11| vs. Frequency

|S21| vs. Frequency

|S12| vs. Frequency

|S22| vs. Frequency

Typical S-Parameters Vds = 5.0V

SCA-11 0.3-3 GHz Cascadable MMIC Amplifier

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

-18

-16

-14

-12

-10

-8

0.3 1 2 3

4

6

8

10

12

14

0.3 1 2 3

-20

-18

-16

-14

-12

-10

0.3 1 2 3

-20

-18

-16

-14

-12

-10

0.3 1 2 3

dB

GHz

GHz

dB

dB

GHz

GHz

dB

TOIP vs. Frequency

24

26

28

30

0.3 1 2 3

dBm

GHz

Freq GH z |S 11| S11 Ang |S21 | S21 Ang |S12 | S12 Ang |S22 | S2 2 Ang

.300

.175 -73 2. 942 160 .1 32 -27 .104 -131

.500

.115 -107 3.220 1 39 .119 -4 4 .104 13 6

.750

.075 -1 34 3.18 8 114 .113 -59 .114 60

.900

.065 -1 49 3.116 101 .112 -69 .168 30

1.00

.063 -1 62 3.07 7 91 .111 -76 .183 12

1.50

.077 13 1 3.007 48 .103 -117 .250 -63

2.00

.136 86 3.02 5 6 .085 -1 64 .304 -1 36

2.50

.282 35 3.179 -3 8 .0 45 139 .339 13 5

3.00

.431 -30 3.341 -91 .013 -69 .344 35

T ypical Performance at 25

°°

°°

°

C (Vds = 5.0V , Ids = 75mA)

50 Ohm Gain Blocks

5-130

SCA-11 0.3-3 GHz Cascadable MMIC Amplifier

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Device Current 135mA

Power Dissipation 820mW

R F Inp u t P ow e r 2 00 m W

Junction Temperature +150C

Operating Tem perature -45C to +85C

Storage Tem perature -65C to +150C

Notes:

1. Operation of this device above any one of these
parameters may cause permanent damage.

Lead

Temperature

MTTF (hrs)

+55C 1,000,000

+70C 100,0 00

+100C 10, 00 0

MTTF vs. T emperature

@ Id = 75mA

Thermal Resistance (Lead-Junction): 155° C/W

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Typical Biasing Configuration

50 Ohm Gain Blocks

= 5.0 V

5.0V

Outline Drawing

Pin Designation

1RF in
2GND
3 RF out and Bias
4GND

Mounting Instructions

The data shown was taken on a 31mil thick FR-4 board with
1 ounce of copper on both sides.
The board was mounted to a baseplate with 3 screws as shown.
The screws bring the top side copper temperature to the same
value as the baseplate.

1. Use 1 or 2 ounce copper, if possible.

2. Solder the copper pad on the backside of the device
package to the ground plane.

3. Use a large ground pad area with many plated through-holes
as shown.

4. If possible, use at least one screw no more than 0.2 inch
from the device package to provide a low thermal resistance
path to the baseplate of the package.

5. Thermal resistance from ground lead to screws is
2 deg. C/W.

1

2

3

4

5-131

SCA-11