Datasheet SCA-1 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SCA-1 is a high performance Gallium
Arsenide MESFET MMIC Amplifier. This device is fabricated
using Stanford’s reliable 0.5 micron gate MESFET process.

This amplifier is internally matched with typical VSWR of

1.6:1. Its positive gain slope makes it an ideal choice for
cascading multiple amplifiers without sacrificing high
frequency response.

These unconditionally stable amplifiers provides 10dB of gain
and 100mW of 1dB compressed power and require only a
single positive voltage supply. Only 2 DC-blocking capacitors
and an optional inductor are needed for operation.

This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.

SCA-1

0.3-3 GHz, Cascadable
GaAs MMIC Amplifier

Product Features

• High Output Power : +20dBm P1dB

• Very Flat Gain : +/-0.5dB from 0.3-2.0 GHz

• Cascadable 50 Ohm : 1.6:1 VSWR

• Operates From Single Supply

• Low Thermal Resistance Package
Applications

• Cellular, PCS, CDPD, Wireless Data, SONET

Sym bol

Param eters: Test Conditions:
VD = +5.0V, Z0 = 50 O hms

Units Min. Ty p . M ax.

G

P

Pow er G ain f = 0.3-3.0 GH z dB 8 10

G

F

Gain Flatness
Gain Flatness over an

y

100 M Hz band

f = 0.3-2.0 GH z dB

dB

+/- 0.5
+/- 0.1

P

1dB

Output Pow er at 1dB Com pre ssion f = 0.3-3.0 GH z dBm +20

NF Noise Fi

g

ure f = 0.3-3.0 GH z dB 3.5

VSW R Input / Output f = 0.3-2.0 GH z - 1.6:1

IP

3

Third Order Intercept Point
Output Tones @ 0dBm 10 M Hz apart

f = 0.3-2.0 GH z dBm +28 +32

T

D

Group Dela

y

f = 1.9 GHz psec 100

ISO L Reverse Isolation f = 0.3-3.0 GH z dB 14

I

D

De vice C urrent

V

D

= +5.0V

m A 60 90 140

dG/dT D evice Gain Tem perature Co efficient dB/de

g

C -0.0015

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Electrical Specifications at Ta = 25C

Output Power vs. Frequency

Vd= 5V

dBm

GHz

18

19

20

21

22

0.3123

50 Ohm Gain Blocks

5-101

|S11| vs. Frequency

|S21| vs. Frequency

|S12| vs. Frequency

|S22| vs. Frequency

Typical S-Parameters Vd = 5.0V

SCA-1 0.3-3 GHz Cascadable MMIC Amplifier

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

-18

-16

-14

-12

-10

-8

0.3 1 2 3

4

6

8

10

12

14

0.3 1 2 3

-20

-18

-16

-14

-12

-10

0.3 1 2 3

-20

-18

-16

-14

-12

-10

0.3 1 2 3

dB

GHz

GHz

dB

dB

GHz

GHz

dB

TOIP vs. Frequency

28

30

32

34

36

0.3 1 2 3

dBm

GHz

Freq GH z |S11| S11 Ang |S2 1| S2 1 Ang |S1 2| S12 Ang |S22 | S22 Ang

.300

.175 -73 2.942 160 .132 -27 .104 -131

.500

.115 -107 3.220 139 .119 -44 .104 13 6

.750

.075 -134 3.18 8 114 .113 -59 .114 60

.900

.065 -149 3. 116 101 .112 -69 .168 30

1.00

.063 -162 3.07 7 91 .111 -76 .183 12

1.50

.077 131 3.00 7 48 .1 03 -117 .250 -63

2.00

.136 86 3.02 5 6 .085 -164 .304 -136

2.50

.282 35 3.17 9 -38 .045 13 9 .339 135

3.00

.431 -30 3.341 -91 .013 -69 .344 35

Typical Performance at 25

°°

°°

°

C (Vds = 5.0V , Ids = 90mA)

50 Ohm Gain Blocks

5-102

SCA-1 0.3-3 GHz Cascadable MMIC Amplifier

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Device Current 135m A

Power Dissipation 820mW

R F Inp u t P ow e r 2 00 m W

Junction Temperature +150C

Operating Temperature -45C to +85C

Storage Tem perature -65C to +150C

Notes:

1. Operation of this device above any one of these
parameters may cause permanent damage.

Lead Temperature MTTF (hrs)

+85C 1,000,000

+120C 100,000

+150C 10,000

MTTF vs. T emperature

@ Id =90mA, Vd =5V

Thermal Resistance (Lead-Junction): 155° C/W

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Typical Biasing Configuration

Outline Drawing

50 Ohm Gain Blocks

Pin Designation

1RF in
2GND
3 RF out and Bias
4GND

7.0V

= 5.0V

Mounting Instructions

The data shown was taken on a 31 mil thick FR-4 board with
1 ounce of copper on both sides.
The board was mounted to a baseplate with 3 screws as shown.
The screws bring the top side copper temperature to the same
value as the baseplate.

1. Use 1 or 2 ounce copper, if possible.

2. Solder the copper pad on the backside of the device
package to the ground plane.

3. Use a large ground pad area with many plated through-holes
as shown.

4. If possible, use at least one screw no more than 0.2 inch
from the device package to provide a low thermal resistance
path to the baseplate of the package.

5. Thermal resistance from ground lead to screws is
2 deg. C/W.

1

2

3

4

5-103

SCA-1