Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5129
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-Peak 20 A
IB Base current 5 A
PT Total power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5129
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 135 pF
fT Transition frequency IC=0.1A ; VCE=10V 1.7 MHz
Switching times (inductive load)
ts Storage time 4.0
tf Fall time
Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V
Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V
Base-emitter saturation voltage IC=6A ;IB=1.5A 1.4 V
Collector cut-off current VCB=1500V; IE=0 1 mA
Emitter cut-off current VEB=5V; IC=0 10
DC current gain IC=1A ; VCE=5V 10 30
DC current gain IC=6A ; VCE=5V 4 8
I
=5A;I
CP
f
=64kHz
H
B1
(end)
=1A
0.3
μA
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5129
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5129
4
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