Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4467
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1694
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
IB Base current 3 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4467
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gai n IC=3A ; VCE=4V 50 180
COB Output capacitance IE=0 ; VCB=10V,f=1MHz 200 pF
fT Transition frequency IC=0.5A ; VCE=12V 20 MHz
Switching times
ton Turn-on time 0.13
ts Storage time 3.50
Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V
Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V
Collector cut-off current VCB=160V; IE=0 10
Emitter cut-off current VEB=6V; IC=0 10
=4A;RL=10Ω
I
C
=- IB2=0.4A
I
B1
V
=40V
CC
μA
μA
Μs
Μs
tf Fall time
hFE Classifications
O P Y
50-100 70-140 90-180
2
0.32
Μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4467
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4467
4
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