Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4381 2SC4382
DESCRIPTION
·With TO-220F package
·Complement to type 2SA1667/1668
APPLICATIONS
·For TV vertical output ,audio output driver
and general purpose applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 6 V
℃)
2SC4381 150
Open emitter
2SC4382
2SC4381 150
Open base
2SC4382
200
200
V
V
IB Base current 1 A
PC Collector dissipation TC=25℃ 25 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4381 2SC4382
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gain IC=0.7A ; VCE=10V 60
fT Transition frequency IC=0.2A ; VCE=12V 15 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF
Switching time
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=0.7A;IB=70mA 1.0 V
Collector cut-off
current
Emitter cut-off current VEB=6V; IC=0 10 μA
2SC4381 150
IC=25mA ; IB=0
2SC4382
2SC4381 VCB=150V;IE=0 10 μA
2SC4382 VCB=200V;IE=0 10 μA
200
V
ton Turn-on time 1.0 μs
=1A ;IB1=-IB2=0.1A
I
ts Storage time 3.0 μs
tf Fall time
C
V
=20V ,RL=20Ω
CC
1.5 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4381 2SC4382
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4381 2SC4382
4
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