Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4237
DESCRIPTION ·
·With TO-247 package
·Switching power transistor
·High breakdown voltage
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 10 A
ICM Collector current-Peak
IB Base current 4 A
IBM Base current-Peak 8 A
Collector-base voltage Open emitter 1200 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
20 A
T
PD Total power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 0.83 ℃/W
th j-C
150 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4237
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=10V 8 MHz
Switching times resistive load
ton Turn-on time 0.5 μs
ts Storage time 3.5 μs
Collector-emitter sustaining voltage IC=0.2A; IB=0 800 V
Collector-emitt er saturation voltage IC=5A ;IB=1A 1.0 V
Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V
Collector cut-off current
At rated voltage 0.1 mA
Collector cut-off current
Emitter cut-off current At rated voltage 0.1 mA
DC current gain IC=5A ; VCE=5V 8
DC current gain IC=1mA ; VCE=5V 5
=5A
I
C
I
=1A; IB2=2A
B1
V
=4V ,RL=50Ω
BB2
tf Fall time
2
0.3 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4237
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Loading...