Page 1
INCHANGE Semiconductor
1
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
180
V
V
CEO
Collector-Emitter Voltage
180
V
V
EBO
Emitter-Base Voltage
5
V
ICCollector Current-Continuous
1
A
ICMCollector Current-Peak
1.5
A
P
C
Collector Power Dissipation
@ TC=25℃
15
W
Collector Power Dissipation
@ Ta=25℃
2
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc
Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V
·Good Linearity of h
(BR)CEO
= 180V(Min)
FE
·Complement to Type 2SA1535A
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For low frequency driver and high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
2SC3944A
isc website：www.iscsemi.com isc & iscsemi is registered trademark
Page 2
INCHANGE Semiconductor
2
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA; IB= 0
180
V
V
(BR)EBO
Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
5
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
2.0
V
V
B E(
sat
)
Base-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
2.0
V
I
CBO
Collector Cutoff Current
VCB= 180V; IE= 0
10
μA
h
FE-1
DC Current Gain
IC= 150mA; VCE= 10V
95
220
h
FE-2
DC Current Gain
IC= 0.5A; VCE= 5V
50
f
T
Current-Gain—Bandwidth Product
IE= -50mA; VCE= 10V
200
MHz
COBOutput Capacitance
IE= 0; VCB= 10V, f
test
= 1MHz
30
pF
h
FE-1
Classifications
Q
R
95-155
130-220
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
2SC3944A
isc website：www.iscsemi.com isc & iscsemi is registered trademark
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