Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3852
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·High h
APPLICATIONS
·Driver for solenoid and motor,series regulator
and general purpose applications
PINNING
PIN DESCRIPTION
FE
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IB Base current 1 A
PT Total power dissipation
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
25 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3852
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(sat)
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=25mA ;IB=0 60 V
Collector-emitter saturation voltage IC=2A ;IB=50mA 0.5 V
Collector cut-off current VCB=80V; IE=0 10 μA
Emitter cut-off current VEB=6V; IC=0 100 μA
hFE DC current gain IC=0.5A ; VCE=4V 200
fT Transition frequency IC=0.2A ; VCE=12V 15 MHz
COB Collector output capacitance f=1MHz;VCB=10V 50 pF
Switching times
ton
Turn-on time 0.8 μs
IC=1.0A
=15mA ,IB2=-30mA
ts
t
Storage time 3.0 μs
f
Fall time
I
B1
=20V, RL=20Ω
V
CC
1.2 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3852
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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