Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3795 2SC3795A
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·High speed switching
·Low collector saturation voltage
APPLICATIONS
·For high breakdown voltate ,high-speed
switching applications
PINNING
PIN DESCRIPTION
·
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current-Peak 10 A
IB Base current 3 A
PC Collector power dissipation
Collector-base voltage
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 8 V
℃)
2SC3795 800
2SC3795A
Open emitter
TC=25℃
=25℃
T
a
900
40
2
V
W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3795 2SC3795A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 8 MHz
Switching times
ton
ts
Collector-emitter sustaining voltage IC=0.2A , L=25mH 500 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 8
Turn-on time
Storage time 3.0
2SC3795 VCB=800V; IE=0
0.1 mA
2SC3795A V
2SC3795 1.0
2SC3795A
=900V; IE=0
CB
=3A; IB1=- IB2=0.6A
I
C
V
=200V
CC
μs
1.2
μs
tf
Fall time
2
2SC3795 1.0
2SC3795A
1.2
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3795 2SC3795A
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3795 2SC3795A
4
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