Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3688
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·High speed
APPLICATIONS
·Ultrahigh-definition color display horizontal
deflection output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 10 A
ICM Collector current-peak 25 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
150 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3688
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 8
Switching times
ts Storage time 3.0 μs
tf Fall time
Collector-emitter sustaining voltage IC=0.1A ;IB=0A 800 V
Collector-emitter saturation voltage IC=8A ; IB=2.0A 5.0 V
Base-emitter saturation voltage IC=8A ; IB=2.0A 1.5 V
Collector cut-off current VCE=1500V; RBE=0V 1.0 mA
Emitter cut-off current VEB=4V; IC=0A 1.0 mA
=6.0A
I
C
=1.2A;IB2=-2.4A
I
B1
V
=200V
CC
0.2 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3688
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3688
4
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