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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3519 2SC3519A
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1386/A
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SC3519 160
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 4 A
Collector-base voltage
2SC3519A
2SC3519 160
Collector-emitter voltage
2SC3519A
Emitter-base voltage Open collector 5 V
Open emitter
Open base
V
180
V
180
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
130 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3519 2SC3519A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gain IC=5A ; VCE=4V 50 180
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
fT Transition frequency IC=2A ; VCE=12V 50 MHz
Switching times
ton
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 100 μA
2SA1386 160
=25mA ;IB=0
I
C
2SA1386A
2SA1386 VCB=160V; IE=0
2SA1386A VCB=180V; IE=0
Rise time 0.20 μs
180
100 μA
V
ts
tf
hFE Classifications
O P Y
50-100 70-140 90-180
2
Storage
time
Fall time
I
=10A;RL=4Ω
C
=- IB2=1A
I
B1
V
=40V
CC
1.30 μs
0.45 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3519 2SC3519A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3519 2SC3519A
4
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