Page 1
1
isc
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
ICCollector Current-Continuous
1
A
I
B
Base Current-Continuous
0.1
A
P
C
Collector Power Dissipation
@ TC=25℃
10
W
Collector Power Dissipation
@ Ta=25℃
1.5
T
J
Junction Temperature
150℃T
stg
Storage Temperature Range
-55~150
℃
Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
: V
(BR)CEO
= 120V(Min)
·Complement to Type 2SA1358
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier applications.
·Suitable for driver of 60 to 80 Watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
2SC3421
isc website：www.iscsemi.com isc & iscsemi is registered trademark
Page 2
2
isc
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
120
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
5
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
1.0
V
V
BE(on)
Base-Emitter On Voltage
IC= 500mA ; VCE= 5V
1.0
V
I
CBO
Collector Cutoff Current
VCB= 120V; IE= 0
0.1
μA
I
EBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1
μA
hFEDC Current Gain
IC= 0.1A ; VCE= 5V
80
240
f
T
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 5V
120
MHz
COBOutput Capacitance
IE= 0; VCB= 10V, f
test
= 1MHz
15
pF
O
Y
80-160
120-240
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
2SC3421
hFEClassifications
isc website：www.iscsemi.com isc & iscsemi is registered trademark
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