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INCHANGE Semiconductor
oltage
oltage
isc
Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulator and high voltage switching
applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
= 400V(Min)
℃℃℃℃)
isc
Product Specification
2SC3306
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 10 A
ICM Collector Current-Pulse 15 A
IB Base Current-Continuous 5 A
PC
TJ Junction Temperature 150
T
stg
Collector-Base V
Collector-Emitter V
Emitter-Base voltage 7 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -55~150
500 V
400 V
100 W
℃
℃
isc Website：：：：www.iscsemi.cn
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INCHANGE Semiconductor
oltage
isc
Silicon NPN Power Transistor
isc
Product Specification
2SC3306
ELECTRICAL CHARACTERISTICS
TC=25℃℃℃℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
hFE DC Current Gain IC= 5A ; VCE= 5V 10
Switching times
ton
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V
Collector-Base Breakdown V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V
Collector Cutoff Current VCB= 400V ; IE=0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA
Turn-on Time 1.0
Storage Time 2.5
IC= 1mA ; IE= 0 500 V
VCC≈ 200V , IB1= -IB2= 0.5A
RL= 40Ω;PW=20μs
Duty Cycle≤1%
μs
μs
μs
tf
Fall Time
1.0
isc Website：：：：www.iscsemi.cn
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