Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B
DESCRIPTION ·
·With TO-220Fa package
·Complement to type
2SA1306,2SA1306A,2SA1306B
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SC3298 160
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
2SC3298A 180
2SC3298B
2SC3298 160
2SC3298A 180
2SC3298B
Open emitter
Open base
V
200
V
200
IB Base current 0.15 A
T
PC Collector power dissipation
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
=25℃
C
20 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SC3298 160
V
(BR)CEO
V
CEsat
VBE Base-emitter voltage IC=0.5A ,VCE=5V 1.0 V
I
CBO
I
EBO
hFE DC current gain IC=0.1A ; VCE=5V 70 240
Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 25 pF
fT Transition frequency IC=0.1A ; VCE=10V 100 MHz
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.5 V
Collector cut-off current VCB=160V, IE=0 1.0 μA
Emitter cut-off current VEB=5V; IC=0 1.0 μA
2SC3298A 180
2SC3298B
IC=10mA , IB=0
V
200
h
Classifications
FE
O Y
70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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