Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3264
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1295
APPLICATIONS
·Audio and general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 17 A
IB Base current 5 A
Collector-base voltage Open emitter 230 V
Collector-emitter voltage Open base 230 V
Emitter-base voltage Open collector 5 V
℃)
PC Collector power dissipation TC=25℃ 200 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3264
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Switching times
Collector-emitter breakdown voltage IC=25mA ; IB=0 230 V
(BR)CEO
V
Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V
CEsat
I
Collector cut-off current VCB=230V; IE=0 100 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 100 μA
EBO
h
DC current gain IC=5A ; VCE=4V 50 140
FE
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
fT Transition frequency IE=-2A ; VCE=12V 60 MHz
ton Turn-on time 0.30 μs
IC=5A;RL=12Ω
ts Storage time 2.40 μs
tf Fall time
=- IB2=0.5A
I
B1
V
=60V
CC
0.50 μs
hFE classifications
O Y
50-100 70-140
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3264
PACKAGE OUTLINE
3
Fig.2 outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3264
4
Loading...