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INCHANGE Semiconductor
oltage
oltage
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of hFE
·Complement to Type 2SA1227A
APPLICATIONS
·For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
= 160V(Min)
℃℃℃℃)
isc
Product Specification
2SC2987A
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 12 A
ICP Collector Current-Pulse 20 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Base V
Collector-Emitter V
Emitter-Base Voltage 5 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -55~150 ℃
160 V
160 V
120 W
isc Website：：：：www.iscsemi.cn
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INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
isc
Product Specification
2SC2987A
ELECTRICAL CHARACTERISTICS
TC=25℃℃℃℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output Capacitance
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 50 MHz
h
FE-1
Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 1.5 V
Base -Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V
Collector Cutoff Current VCB= 140V; IE= 0 50 μA
Emitter Cutoff Current VEB= 3V; IC= 0 50 μA
DC Current Gain IC= 2A; VCE= 5V 60 320
DC Current Gain IC= 5A; VCE= 5V 40
IE= 0; VCB= 10V; f
= 1.0MHz
test
190 pF
Classifications
R Q P
60-120 100-200 160-320
isc Website：：：：www.iscsemi.cn
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