Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2922
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1216
APPLICATIONS
·Audio and general purpose
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 17 A
IB Base current 5 A
PC Collector power dissipation TC=25℃ 200 W
Collector-base voltage Open emitter 180 V
Collector-emitter voltage Open base 180 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2922
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Switching times
Collector-emitter breakdown voltage IC=25mA ; IB=0 180 V
(BR)CEO
V
Collector-emitter saturation voltage IC=8A IB=0.8A 2.0 V
CEsat
I
Collector cut-off current VCB=180V; IE=0 100 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 100 μA
EBO
h
DC current gain IC=8A ; VCE=4V 30
FE
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
fT Transition frequency IC=2A ; VCE=12V 50 MHz
ton Turn-on time 0.20 μs
IC=10A;RL=4Ω
ts Storage time 1.30 μs
=- IB2=1A
I
B1
=40V
V
CC
tf Fall time
hFE classifications
O Y P G
30-60 50-100 70-140 90-180
0.45 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2922
PACKAGE OUTLINE
3
Fig.2 outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2922
4
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