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INCHANGE Semiconductor
oltage
oltage
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of h
·High Switching Speed
·Complement to Type 2SA1209
APPLICATIONS
·Designed for high-voltage switching and AF 100W predriver
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
= 160V(Min)
FE
℃℃℃℃)
isc
Product Specification
2SC2911
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 140 mA
ICP Collector Current-Pulse 200 mA
PC
TJ Junction Temperature 150 ℃
Collector-Base V
Collector-Emitter V
Emitter-Base Voltage 5 V
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
@ Ta=25℃
180 V
160 V
10
W
1
T
stg
Storage Temperature Range -55~150 ℃
isc Website：：：：www.iscsemi.cn
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INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
isc
Product Specification
2SC2911
ELECTRICAL CHARACTERISTICS
TC=25℃℃℃℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
I
CBO
I
EBO
h
FE
fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 10V 150 MHz
COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 3 pF
Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.3 V
)
sat
Collector Cutoff Current VCB= 80V; IE= 0 0.1 μA
Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA
DC Current Gain IC= 10mA; VCE= 5V 100 400
hFE Classifications
R S T
100-200 140-280 200-400
isc Website：：：：www.iscsemi.cn
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