Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2690 2SC2690A
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SA1220/1220A
APPLICATIONS
·For use in audio and radio frequency
power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.2 A
ICM Collector current-Peak 2.5 A
IB Base current 0.3 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
℃)
2SC2690 120
Open emitter
2SC2690A
2SC2690 120
Open base
2SC2690A
160
160
V
V
V
Ta=25℃
PD Total power dissipation
T
=25℃
C
Tj Junction temperature 150
T
Storage temperature
stg
1.2
W
20
℃
-55～+150 ℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2690 2SC2690A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=1A; IB=0.2A 0.7 V
CEsat
V
Base-emitter saturation voltage IC=1A ;IB=0.2A 1.3 V
BEsat
I
Collector cut-off current VCB=120V; IE=0 1
CBO
I
Emitter cut-off current VEB=3V; IC=0 1
EBO
h
DC current gain IC=5mA ; VCE=5V 35
FE-1
h
DC current gain IC=0.3A ; VCE=5V 60 320
FE-2
Cob Output capacitance IE=0 ; VCB=10V f=1MHz 19 pF
fT Transition frequency IC=0.2A ; VCE=5V 155 MHz
h
Classifications
FE-2
μA
μA
R Q P
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2690 2SC2690A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2690 2SC2690A
4
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