Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2682
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1142
APPLICATIONS
·Audio frequency power amplifier; high
frequency power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
PC Collector power dissipation
Collector-base voltage Open emitter 180 V
Collector-emitter voltage Open base 180 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃ 1.2
T
=25℃ 10
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2682
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=50mA; IB=5mA 0.12 0.5 V
CEsat
V
Base-emitter saturation voltage IC=50mA; IB=5mA 0.8 1.5 V
BEsat
I
Collector cut-off current VCB=180V; IE=0 1 μA
CBO
I
Emitter cut-off current VEB=3V; IC=0 1 μA
EBO
h
DC current gain IC=1mA ; VCE=5V 90 190
FE-1
h
DC current gain IC=10mA ; VCE=5V 100 200 320
FE-2
fT Transition frequency IC=20mA ; VCE=10V 200 MHz
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 3.2 pF
h
Classifications
FE-2
Q P
100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2682
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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