Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2579
DESCRIPTION
·With TO-3PN package
·High power dissipation
·High current capability
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2579
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
fT Transition frequency IC=0.5A ; VCE=10V 20 MHz
Collector-base breakdown voltage IC=5mA; IE=0 160 V
Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 160 V
Emitter-base breakdown voltage IE=5mA ; IC=0 6 V
Collector cut-off current VCB=160V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=3A ; VCE=4V 50
Collector-emitter saturation voltage IC=5A ; IB=0.5A 2.0 V
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2579
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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