Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2335
DESCRIPTION
·With TO-220C package
·Collector-emitter sustaining voltage
V
CEO(sus)
·Collector-emitter saturation voltage
V
CE(sat)
·Switching time-tf=1.0μs(Max.)@IC=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switchmode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
·
=400V(Min)
=1.0V(Max.)@IC=3.0A,IB=0.6A
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
ICM Collector current-peak 15 A
IB Base current 3.5 A
PD Total power dissipation
Tj Junction temperature 150
T
stg
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
Storage temperature -50~150
40 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 3.125 ℃/W
th j-C
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2335
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(SUS)CEO
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
Switching times
ton Turn-on time 1.0
t
stg
tf Fall time
Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH 400 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A; IB=0.6A 1.2 V
Collector cut-off current VCB=400V ;IE=0 10
=400V ;V
V
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 10
DC current gain IC=0.1A ; VCE=5V 20 80
DC current gain IC=1.0A ; VCE=5V 20 80
DC current gain IC=3.0A ; VCE=5V 10
Storage time 2.5
CE
TC=125℃
V
=150V;IC=3.0A;
CC
=-IB2=600mA;
I
B1
=50Ω
R
L
BE(off)
=-1.5V
1.0
10
5.0
μA
μA
mA
μA
μs
μs
μs
h
Classifications
FE-2
M L K
20-40 30-60 40-80
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2335
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2335
4
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