Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1567 2SC1567A
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SA794/794A
·High collector to emitter voltage V
APPLICATIONS
·For low-frequency high power
driver applications
·Optimum for the driver stage of low-frequency
and 40 W to 100 W output amplifier
PINNING
PIN DESCRIPTION
CEO
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector- emitter voltage
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 0.5 A
ICM Collector current-peak 1 A
℃)
2SC1567 100
Open emitter
2SC1567A
2SC1567 100
Open base
2SC1567A
120
120
V
V
PD Total power dissipation TC=25℃ 1.2 W
Tj Junction temperature 150 ℃
T
Storage temperature -55～+150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1567 2SC1567A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SC1567 100
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC1567A
=0.1mA ;IB=0
I
C
V
120
V
h
Emitter-base breakdown voltage IE=1μA ;IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=0.5A ;IB=50m A 0.2 0.4 V
CEsat
V
Base-emitter saturation voltage IC=0.5A ;IB=50m A 0.85 1.2 V
BEsat
h
DC current gain IC=150mA ; VCE=10V 65 330
FE-1
h
DC current gain IC=0.5A ; VCE=5V 50
FE-2
C
OB
fT Transition frequency IC=50mA ; VCE=10V,f=200MHz 120 MHz
Output capacitance IE=0 ; VCB=10V;f=1MHz 11 pF
Classifications
FE-1
R S
130-220 185-330
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1567 2SC1567A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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