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DESCRIPTION
The SC1182/3 combines a synchronous voltage mode
controller with two low-dropout linear r egulators
providing most of t he c ircuitry necessary to implement
three DC/DC converters for powering advanced
micr opr oc essors such as Pentium
Deschutes.
The SC1182/3 switchi ng sect ion features an integrat ed 5 bit D/A c onverter, pulse by pulse current limiting,
integrated power good signaling, and logic compatible
shutdown. The SC1182/3 switching sect ion operates
at a fixed frequency of 200kHz, providing an optimum
compromise between size, efficiency and cost in the
intended application areas. The int egr ated D/A converter provides programmability of output voltage
from 2.0V to 3.5V in 100m V increments and 1.30V to
2.05V in 50mV increments with no external components.
The SC1182/3 linear sections are low dropout regulators. The SC1182 supplies 1.5V for GTL bus and 2.5V
for non-G TL I/O.
®
II (Kl amath) or
SC1182/3
FEATURES
•
Synchronous design, enables no heatsi nk sol ution
• 95% efficiency (switching sect ion)
• 5 bit DAC for output programmability
• On chip power good function
• Designed for I ntel Pentium
ments
• 1.5V, 2.5V or A dj. @ 1% for l inear section
APPLICATIONS
•
Pentium® ll or Deschutes microprocessor supplies
• Flex ible motherboards
• 1.3V to 3.5V microprocessor supplies
• Programmable triple power suppli es
ORDERING INFORMATION
Part Number
SC1182CSWSO-241.5V/2.5V 0° to 125°C
SC1183CSWSO-24Adj.0° to 125°C
-0.3 to +7V
PGND to GND± 1V
BST to GND-0.3 to +15V
Operating Temperature RangeT
Junction T emperature RangeT
Storage Temperature RangeT
Lead Temperat ur e ( S oldering) 10 secondsT
Thermal Impedance Junction to Ambient
Thermal Impedance Junction to Case
θ
θ
A
J
STG
L
JA
JC
0 to +70°C
0 to +125°C
-65 to +150°C
300°C
80°C/W
25°C/W
ELECTRICAL CHARACTERISTICS
Unless specified: VCC = 4.75V to 5.25V; GND = P
GND
= 0V; V
= VO; 0mV < (CSp-CSm) < 60mV; LDOV = 11.4V to 12.6V; TA = 25°C
OSENSE
PARAMETERCONDITIONSMINTYPMAX UNITS
Switching Section
Line Regulation0.5%
Minimum operating voltage4.2V
Current Limit Voltage607080mV
Oscillator Frequency180200220kHz
Oscillator Max Duty Cycle9095%
Peak DH Sink/ S our c e Cur r entBSTH-DH = 4.5V, DH-PGNDH = 2V1A
Peak DL Sink/ S our c e Cur r entBSTL-DL = 4.5V, DL-PGNDL = 2V1A
Output Voltage Tempco30100ppm/
Gain (A
)V
OL
OSENSE
to V
O
35dB
o
OVP threshold voltage120%
OVP source currentV
= 3.0V10mA
OVP
Power good threshold voltage88112%
Dead tim e50100ns
Linear Sections
Quiescent curr entLDOV = 12V5mA
Output Voltage (LDO1 SC1182)2.475 2.500 2. 525V
Output Voltage (LDO2 SC1182)1.485 1.500 1. 515V
Reference Voltage (SC1183)1.252 1.265 1. 278V
Feedback Pin B ias Current (SC1183)10uA
Gain (A
Load RegulationI
1AGNDSmall Signal Analog and Di gital Ground
2GATE1Gate Drive Output LDO1
3LDOS1Sense Input for LDO1
4LDOS2Sense Input for LDO2
5VCCInput Voltage
6OVPHigh Signal out i f V
(1)
7PWRGOOD
Open coll ec tor logic output, high if V
within 10% of setpoint
8CS-Current Sense Input (negative)
9CS+Current Sense Input (positive)
10PGNDHPower Ground for High Side Switch
11DHHigh Side Driver Output
12PGNDLPower Ground for Low Side Switch
13DLLow Side Driver Output
14BSTLSupply for Low Side Driver
15BSTHSupply for High Side Driver
16EN
(1)
Logic low shuts down the conv er ter;
High or open f or nor mal operation.
1L14µH8 Turns 16AWG on MICROMETA LS T50-52D core
4Q1,Q2,Q3,Q4See notesS ee notesFET selection requires trade-off between efficiency and
1R4
1R5
1R6
1R1
1R121%, 1/8WVariousSee Table Below (Not required f or S C1182)
1R131%, 1/8WVariousSee Table Below (Not required f or S C1182)
1R141%, 1/8WVariousSee Table Below (Not required f or S C1182)
1R151%, 1/8WVariousSee Table Below (Not required f or S C1182)
Careful attention to layout r equirements are necessary
for successful implementation of the SC1182/ 3 P WM
controller. High currents switching at 200kHz are present in the application and their effect on ground plane
voltage diff er entials must be understood and minimized.
1). The high power part s of the circuit shoul d be laid
out first. A ground plane should be used, the num ber
and position of ground plane interruptions should be
such as to not unnecessarily compromise ground plane
integri ty. Isolated or semi- isolated areas of the ground
plane may be deliberately introduced to constrain
ground currents to part icular areas, for example the
input capacitor and bottom FET ground.
2). The loop formed by the Input Capac itor(s) (Cin), the
Top FET (Q1) and the Bottom FE T (Q2) must be kept
10
1
AGND
2
GATE1
3
LDOS1
4Q1
5
6
7
8
9
10
11
12
LDOS2
VCC
OVP
PWRGOOD
CS-
CS+
PGNDH
DH
PGNDL
0.1uF
0.1uF
GATE2
LDVO
VID0
VID1
VID2
VID3
VID4
VO SENSE
EN
BSTH
BSTL
DL
SC1182/3
as small as possible. This loop contains all the high
current, fast transition switchi ng. Connections should
be as wide and as short as possible to minimize loop
inductance. M inimizi ng this loop area will a) reduce
EMI, b) lower ground injection currents, result ing in
electrically “cleaner” gr ounds for the rest of the system
and c) mi nimize source ringing, resulting in more reliable gate switchi ng si gnals.
3). The connect ion between the junction of Q1, Q2 and
the output i nduc tor should be a wide trace or copper
region. It should be as short as practical. Since this
connection has fast voltage tr ansi tions, keeping this
connection short will minimize EMI. The connection
between the output induc tor and the sense resistor
should be a wide trace or copper ar ea, there are no
fast voltage or current t r ansi tions in this connection
and length is not so i mportant, however adding unnecessary impedance will reduce efficiency.
4) The Output Capac itor(s) (Cout) should be locat ed
as close to the load as possible, fast transient load
currents are supplied by Cout only, and connections
between Cout and the load must be short, wide copper areas to mi nimize induct anc e and r esi stanc e.
5) The SC1182/3 i s best pl ac ed over a quiet ground
plane area, avoid pulse currents in t he Cin, Q1, Q2
loop flowing in this area. PGNDH and PGNDL should
be returned to the gr ound plane close to the package.
The AGND pin shoul d be c onnec ted to the ground
side of (one of) the output capacitor(s). If thi s i s not
possible, the AG ND pin may be connected to the
ground path between the Output Capacitor(s) and the
Cin, Q1, Q2 loop. Under no circumstances should
AGND be returned t o a gr ound inside the Cin, Q1, Q 2
loop.
6) Vcc for the SC1182/3 shoul d be supplied from the
5V
5V supply through a 10Ω resistor, the Vcc pin should
be decoupled direc tly to AGND by a 0.1µF ceramic
capacitor, trace lengths should be as short as possi-
ble.
7) The Current Sense resistor and the divider ac r oss
it should form as small a l oop as possible, the traces
running back to CS + and CS- on the SC1182/3
should run parall el and close to each other. The
0.1µF capacit or shoul d be mounted as close to the
CS+ and CS- pi ns as possible.
8) Ideall y , the grounds for the two LDO sections
should be returned to t he gr ound si de of (one of) the
output capaci tor(s).
SWITCHING SECTION
OUTPUT CAPACITORS - Selection begins with the
most cri tical component. Because of fast transient load
current requi r ements in modern microprocessor core
supplies, the output capacitors must supply al l transient
load current r equirements until the current in the output
inductor ramps up to the new level. Output capacitor
ESR is therefore one of the most important criteria. The
maximum ESR can be simply calculat ed from:
V
R
ESR
t
≤
I
t
Where
=
t
=
t
step current Transient I
For example, to meet a 100mV transient li mit with a
10A load step, the output capacitor ESR must be less
than 10mΩ. To meet this kind of ESR level, t her e ar e
three available capacitor technologies.
The choice of which to use is simply a cost/performance issue, with Low ESR Aluminum bei ng the
cheapest, but taking up the most space.
INDUCTOR - Having decided on a suitable type and
value of output capacitor, the maximum allowable
value of inductor can be calculated. Too lar ge an inductor will produce a slow current ramp rate and will
cause the output capacitor to supply more of the transient load curr ent for longer - leading to an output voltage sag below the ESR excursi on c alculated above.
The maximum induc tor value m ay be c alculated from:
CR
ESR
L
()
I
t
VV
−≤
OIN
The calculated maximum inductor value assumes 100%
duty cycle, so some allowance must be made. Choosing
an inductor value of 50 to 75% of the calculat ed maximum will guarantee that the inductor c ur r ent will ramp
excursion voltage transient MaximumV
Qty.
Rqd.C(µF)
ESR
(mΩ)
fast enough to reduc e the voltage dropped acr oss the
ESR at a f aster rate than the capacitor sags, hence ensuring a good recovery from t r ansi ent with no additional
excursions.
We must also be concerned with rippl e c ur r ent in the
output inductor and a general rule of thumb has been to
allow 10% of maximum output current as rippl e c ur r ent.
Note that most of the output voltage ripple is produced
by the induct or ripple current flowing in the output capacitor ES R. Ripple current can be calculated from:
V
I
L
RIPPLE
IN
=
fL4
⋅⋅
OSC
Ripple current allowance will define the minimum permit ted inductor value.
POWER FETS - The FETs are chosen based on several cri teria with probably the most important being
power dissipation and power handli ng c apability.
TOP FET - The power dissipation in the t op FET is a
combination of conducti on losses, switching l osses and
bottom FET body diode recovery losses.
a) Conduction losses are simply c alculated as:
2
RIP
OCOND
δ⋅⋅=
)on(DS
where
V
O
cycleduty =
≈δ
V
IN
b) Switching losses can be estimated by assuming a
switching ti me, if we assume 100ns then:
2
−
10VIP
⋅⋅=
INOSW
or more generally,
f)tt(VI
⋅+⋅⋅
P
=
SW
4
c) Body diode rec overy losses are more difficult to estimate, but to a first approximation, it is reasonable to assume that the stor ed c har ge on the bottom FET body
diode will be moved through the top FET as it start s to
turn on. The resul ting power dissipation in the t op FET
will be:
fVQP
⋅⋅=
OSCINRRRR
To a first order approxim ation, it is convenient to only
consider conduction losses to determine FET suitability.
For a 5V in; 2.8V out at 14.2A requirement, typical FET
losses would be:
BOTTOM FET - Bottom FET losses are almost entirely
due to conducti on. The body diode is forced into conduction at the beginning and end of the bot tom switch
conduction period, so when the FET turns on and off,
there is very little voltage across it , resulting in low
switching losses. Conducti on losses for the FET can be
determined by:
2
OCOND
)on(DS
)1(RIP
δ−⋅⋅=
For the ex ample above:
FET type
R
DS(on)
(mΩ)
(W)Package
P
D
BUK556H 221.95TO220
IRL22037.00.62D
2
PAK
Si441013.51.20SO-8
INPUT CAPACITORS - since the RMS ripple current
in the input capacitors may be as high as 50% of the
output current , suitable capacitors must be chosen accordingly . Also, during fast load transients, there may
be restrictions on input di/dt. T hese restrictions require
useable energy storage withi n the converter circuitry,
either as extra output capacitance or, more usually,
additional input capacitors. Choosi ng low ESR input
capacitors will help maximize ripple rating for a given
size.
Each of t he pac k age types has a characteristic thermal
impedance, for the TO-220 pack age, thermal
impedance is mostly determined by the heatsink used.
For the surf ac e mount packages on double sided FR4, 2
oz printed circuit board mat er ial, thermal impedances of
o
C/W for the D2PAK and 80oC/W for the SO-8 are
40
readily ac hievable. T he c or r espondi ng temperature rise
is detail ed below:
Temperat ur e r ise (oC)
FET typeTop FETBottom FET
BUK556H 49.6
(1)
39.0
(1)
IRL220331.624.8
Si4410122.496
(1) Wit h 20
o
C/W Heatsink
It is apparent that single SO-8 Si4410 ar e not adequate
for this application, but by using parallel pairs in each position, power dissipation will be approximately halved and
temperat ur e r ise reduced by a factor of 4.