Datasheet SC1182, SC1183 Datasheet (SEMTECH)

Page 1
查询SC1182供应商
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
August 25, 1998
TEL:805-498-2111 F A X:805- 498- 3804 WEB:http://www.semtech.com
DESCRIPTION
The SC1182/3 combines a synchronous voltage mode controller with two low-dropout linear r egulators providing most of t he c ircuitry necessary to implement three DC/DC converters for powering advanced micr opr oc essors such as Pentium Deschutes.
The SC1182/3 switchi ng sect ion features an integrat ­ed 5 bit D/A c onverter, pulse by pulse current limiting, integrated power good signaling, and logic compatible shutdown. The SC1182/3 switching sect ion operates at a fixed frequency of 200kHz, providing an optimum compromise between size, efficiency and cost in the intended application areas. The int egr ated D/A con­verter provides programmability of output voltage from 2.0V to 3.5V in 100m V increments and 1.30V to
2.05V in 50mV increments with no external compo­nents.
The SC1182/3 linear sections are low dropout regula­tors. The SC1182 supplies 1.5V for GTL bus and 2.5V for non-G TL I/O.
®
II (Kl amath) or
SC1182/3
FEATURES
Synchronous design, enables no heatsi nk sol ution
95% efficiency (switching sect ion)
5 bit DAC for output programmability
On chip power good function
Designed for I ntel Pentium
ments
1.5V, 2.5V or A dj. @ 1% for l inear section
APPLICATIONS
Pentium® ll or Deschutes microprocessor supplies
Flex ible motherboards
1.3V to 3.5V microprocessor supplies
Programmable triple power suppli es
Part Number
SC1182CSW SO-24 1.5V/2.5V 0° to 125°C SC1183CSW SO-24 Adj. 0° to 125°C
(1)
Package
®
ll VRM8.1 require-
Linear
Voltage
Range (T
Temp.
J
)
For the SC1183 both LDO’s are adjustable.
PIN CONFIGURATION
Top View
GATE2
AGND
GATE1 LDOS1 LDOS2
VCC OVP
PWRGOOD
CS-
CS+
PGNDH
DH
PGNDL
1 2 3 4 5 6 7 8
9 10 11 12
(24 Pin SOIC)
24
LDOV
23 22
VID0 VID1
21
VID2
20
VID3
19
VID4
18
VOSENSE
17
EN
16
BSTH
15
BSTL
14 13
DL
Note: (1) Add suffix ‘TR’ f or tape and reel.
BLOCK DIAGRAM
REF.
FET
CONTROLLER
2.5V/ADJ.
1.265V REF.
FET
CONTROLLER
1.5V/ADJ.
© 1998 SEMTECH CORP.
LDOV
Pentium is a registered trademark of Intel Corporation
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652 MITCHELL ROA D NE WBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT
SC1182/3
REGULATOR CONTROLLER
August 25, 1998
ABSOLU TE MAXIMUM RATINGS
Parameter Symbol Maximum Units
to GND V
V
CC
IN
-0.3 to +7 V PGND to GND ± 1 V BST to GND -0.3 to +15 V Operating Temperature Range T
Junction T emperature Range T Storage Temperature Range T Lead Temperat ur e ( S oldering) 10 seconds T Thermal Impedance Junction to Ambient Thermal Impedance Junction to Case
θ θ
A
J
STG
L
JA JC
0 to +70 °C
0 to +125 °C
-65 to +150 °C 300 °C
80 °C/W 25 °C/W
ELECTRICAL CHARACTERISTICS
Unless specified: VCC = 4.75V to 5.25V; GND = P
GND
= 0V; V
= VO; 0mV < (CSp-CSm) < 60mV; LDOV = 11.4V to 12.6V; TA = 25°C
OSENSE
PARAMETER CONDITIONS MIN TYP MAX UNITS Switching Section
Output Voltage I Supply Vol tage V Supply Current V Load Regulation I
= 2A See Note 1.
O
CC
= 5.0 8 15 mA
CC
= 0.8A to 15A 1 %
O
4.2 7 V
Line Regulation 0.5 % Minimum operating voltage 4.2 V Current Limit Voltage 60 70 80 mV Oscillator Frequency 180 200 220 kHz Oscillator Max Duty Cycle 90 95 % Peak DH Sink/ S our c e Cur r ent BSTH-DH = 4.5V, DH-PGNDH = 2V 1 A Peak DL Sink/ S our c e Cur r ent BSTL-DL = 4.5V, DL-PGNDL = 2V 1 A Output Voltage Tempco 30 100 ppm/ Gain (A
)V
OL
OSENSE
to V
O
35 dB
o
OVP threshold voltage 120 % OVP source current V
= 3.0V 10 mA
OVP
Power good threshold voltage 88 112 % Dead tim e 50 100 ns
Linear Sections
Quiescent curr ent LDOV = 12V 5 mA Output Voltage (LDO1 SC1182) 2.475 2.500 2. 525 V Output Voltage (LDO2 SC1182) 1.485 1.500 1. 515 V Reference Voltage (SC1183) 1.252 1.265 1. 278 V Feedback Pin B ias Current (SC1183) 10 uA Gain (A Load Regulation I
) LDOS (1,2) to GATE (1,2) 90 dB
OL
= 0 to 8A
O
(2)
0.3 % Line Regulation 0.3 % Output Impedance 200
C
Notes:
(1) See Output V oltage table.
(2) In application circuit. © 1998 SEMTECH CORP.
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652 MITCHELL ROA D NE WBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
August 25, 1998
PIN DESCRIPTION
Pin Pin Name Pin Function
1 AGND Small Signal Analog and Di gital Ground 2 GATE1 Gate Drive Output LDO1 3 LDOS1 Sense Input for LDO1 4 LDOS2 Sense Input for LDO2 5 VCC Input Voltage 6 OVP High Signal out i f V
(1)
7 PWRGOOD
Open coll ec tor logic output, high if V within 10% of setpoint
8 CS- Current Sense Input (negative)
9 CS+ Current Sense Input (positive) 10 PGNDH Power Ground for High Side Switch 11 DH High Side Driver Output 12 PGNDL Power Ground for Low Side Switch 13 DL Low Side Driver Output 14 BSTL Supply for Low Side Driver 15 BSTH Supply for High Side Driver 16 EN
(1)
Logic low shuts down the conv er ter; High or open f or nor mal operation.
17 VOSENS E Top end of internal feedback chain
VID4 VID3 VID2 VID1 VID0
(1) (1) (1) (1) (1)
Programming Input (MSB) Programming Input Programming Input Programming Input Programming Input (LSB)
18 19 20 21 22 23 LDOV +12V for LDO section 24 GATE 2 Gate Drive Output LDO2
>setpoint +20%
O
Top View
AGND
O
GATE1 LDOS1 LDOS2
VCC OVP
PWRGOOD
CS+
PGNDH
PGNDL
CS-
DH
1 2 3 4 5 6 7 8
9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
(24 Pin SOIC)
Note: (1) All logic lev el inputs and outputs are open collector TTL compatible.
SC1182/3
GATE2 LDOV VID0 VID1 VID2 VID3 VID4 VOSENSE EN BSTH BSTL DL
© 1998 SEMTECH CORP.
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652 MITCHELL ROA D NE WBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
August 25, 1998
OUTPUT VOLTAGE
Unless specified: VCC = 4.75V to 5.25V; GND = PGND = 0V; V
PARAMETER CONDITIONS VID
Output Voltage I
= 2A in Application cir c uit 01111 1.287 1.300 1.313 V
O
= VO; 0mV < (CSp-CSm) < 60mV; TA = 25°C
OSENSE
SC1182/3
MIN TYP MAX UNITS
43210
01110 1.336 1.350 1.364 01101 1.386 1.400 1.414 01100 1.435 1.450 1.465 01011 1.485 1.500 1.515 01010 1.534 1.550 1.566 01001 1.584 1.600 1.616 01000 1.633 1.650 1.667 00111 1.683 1.700 1.717 00110 1.732 1.750 1.768 00101 1.782 1.800 1.818 00100 1.831 1.850 1.869 00011 1.881 1.900 1.919 00010 1.930 1.950 1.970 00001 1.980 2.000 2.020 00000 2.029 2.050 2.071 11111 1.980 2.000 2.020 11110 2.079 2.100 2.121 11101 2.178 2.200 2.222 11100 2.277 2.300 2.323 11011 2.376 2.400 2.424 11010 2.475 2.500 2.525 11001 2.574 2.600 2.626 11000 2.673 2.700 2.727 10111 2.772 2.800 2.828 10110 2.871 2.900 2.929 10101 2.970 3.000 3.030 10100 3.069 3.100 3.131 10011 3.168 3.200 3.232 10010 3.267 3.300 3.333 10001 3.366 3.400 3.434 10000 3.465 3.500 3.535
© 1998 SEMTECH CORP.
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August 25, 1998
APPLICATION CIRCUIT
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
SC1182/3
R5 2.32k
R6 1.00k
C13
10k
R16
10
R1
0.1uF
23
2
LDOV
R13
GATE1
*
3
4
LDOS1
LDOS2
VLIN1
+
+
Q3
R12
*
SC1182/3CSW
BUK556
GND
0.1uF
C18
C16
C14
1500uF
1500uF
+
+
Q1
BUK556
C15
R4
C17
5mOhm
L1
1500uF
VCC_CORE
1500uF
4uH
+
+
Q2
BUK556
7
PWRGOOD
VID1
21
15
18
VID4
BSTH
VID3
VID2
19
20
10
11
13
14
DH
EN
16
PGNDH
AGND
1
DL
PGNDL
12
24
BSTL
GATE2
8
9
17
CS-
CS+
VO SENSE
VCC
OVP
U1
VID0
5
6
22
R15
*
C12 330uF
C11 330uF
100K
R17
VLIN2
CONNECT LDOS1 (PIN3) AND LDOS2 (PIN4)
DIRECTLY GENERATE 2.5V AND 1.5V OUTPUTS.
TO VLIN1 AND VLIN2 RESPECTIVELY TO
* SEE "SETTING LDO OUTPUT VOLTAGE" TABLE
NOTE: FOR SC1182, R12,R13,R14 AND R15 ARE NOT REQUIRED.
C10 330uF
+
+
330uF
C9
Q4
BUK556
R14
*
R18
100K
+
+
12V 5V
C1
© 1998 SEMTECH CORP.
0.1uF
C3
1500uF
C2
1500uF
C5
OVP
EN
0.1uF
VID0 VID1 VID2 VID3 VID4
PWRGD
C22 330uF
+
+
C21
330uF
5V 5V
5
652 MITCHELL ROA D NE WBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
August 25, 1998
MATERIALS LIST
Qty. Reference Part/Description Vendor Notes
SC1182/3
4 C1,C5,C13,
C18
6 C2,C3,C14-
C17
6 C9-C12,
C21, C22
1 L1 4µH 8 Turns 16AWG on MICROMETA LS T50-52D core 4 Q1,Q2,Q3,Q4See notes S ee notes FET selection requires trade-off between efficiency and
1R4 1R5 1R6 1R1 1 R12 1%, 1/8W Various See Table Below (Not required f or S C1182) 1 R13 1%, 1/8W Various See Table Below (Not required f or S C1182) 1 R14 1%, 1/8W Various See Table Below (Not required f or S C1182) 1 R15 1%, 1/8W Various See Table Below (Not required f or S C1182)
0.1µF Ceramic Various
1500µF/6.3V SANYO MV-GX or equiv . Low ESR
330µF/6. 3V Various
cost. Absolute maximum R
5m
2.32kΩ, 1%, 1/8W 1kΩ, 1%, 1/8W 10Ω, 5%, 1/8W
IRC OAR-1 Series Various Various Various
= 22 mΩ for Q1,Q2
DS(ON)
2 R17, R18 100K, 5%, 1/8W Various 1 U1 SC1182/ 3CSW SEMTECH
SETTING LDO OUTPUT VOLTAGE
R
B
VOUT LDO1 (LDO2) R12 ( R14) R13 (R15)
3.45V
3.30V
3.10V
2.90V
2.80V
2.50V
1.50V
105 105 102 100 100 100 100
Ω Ω Ω Ω Ω Ω Ω
R
A
182 169 147 130 121
97.6
18.7
Ω Ω Ω Ω Ω
Ω Ω
)RR(265.1
+
V
=
OUT
R
B
BA
)RI(
+
AFB
:Where
FB
=
=
A
=
B
current bias pin FeedbackI
resistor feedback Top R
resistor feedback Bottom R
ionclarificat for diagram layout See
BA
AFB
so enoughlow be must R and R
cause not does term )RI( the that
error tsignifican
6
© 1998 SEMTECH CORP.
652 MITCHELL ROA D NE WBURY PARK CA 91320
Page 7
August 25, 1998
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
SC1182/3
95%
90%
85%
Efficiency
80%
75%
70%
0 2 4 6 8 10 12 14 16
3.5V Std
3.5V Sync
3.5V Sync Lo Rds
Io (Amps)
95%
90%
85%
Efficiency
80%
75%
70%
0 2 4 6 8 10 12 14 16
2.8V Std
2.8V Sync
2.8V Sync Lo Rds
Io (Amps)
Typical Efficiency at Vo=3.5V Typical Efficiency at Vo=2.8V
95%
90%
85%
Efficiency
80%
75%
2.5V Std
2.5V Sync
2.5V Sync Lo Rds
95%
90%
85%
Efficiency
80%
75%
2.0V Std
2.0V Sync
2.0V Sync Lo Rds
70%
0246810121416
Io (Amps)
Typical Efficiency at Vo=2.5V
Typical Ripple, Vo=2.8V , Io=10A
70%
0 2 4 6 8 10 12 14 16
Io (Amps)
Typical Efficiency at Vo=2.0V
Transient Response Vo=2.8V , Io=300mA to 10A
© 1998 SEMTECH CORP.
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652 MITCHELL ROA D NE WBURY PARK CA 91320
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August 25, 1998
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
SC1182/3
LAYOUT GUIDELINES
Careful attention to layout r equirements are necessary for successful implementation of the SC1182/ 3 P WM controller. High currents switching at 200kHz are pre­sent in the application and their effect on ground plane voltage diff er entials must be understood and mini­mized.
1). The high power part s of the circuit shoul d be laid out first. A ground plane should be used, the num ber and position of ground plane interruptions should be such as to not unnecessarily compromise ground plane integri ty. Isolated or semi- isolated areas of the ground plane may be deliberately introduced to constrain ground currents to part icular areas, for example the input capacitor and bottom FET ground.
2). The loop formed by the Input Capac itor(s) (Cin), the Top FET (Q1) and the Bottom FE T (Q2) must be kept
10
1
AGND
2
GATE1
3
LDOS1
4 Q1 5 6 7 8
9 10 11 12
LDOS2 VCC
OVP
PWRGOOD CS-
CS+
PGNDH DH
PGNDL
0.1uF
0.1uF
GATE2
LDVO
VID0
VID1 VID2
VID3
VID4
VO SENSE
EN
BSTH BSTL
DL
SC1182/3
as small as possible. This loop contains all the high current, fast transition switchi ng. Connections should be as wide and as short as possible to minimize loop inductance. M inimizi ng this loop area will a) reduce EMI, b) lower ground injection currents, result ing in electrically “cleaner” gr ounds for the rest of the system and c) mi nimize source ringing, resulting in more reli­able gate switchi ng si gnals.
3). The connect ion between the junction of Q1, Q2 and the output i nduc tor should be a wide trace or copper region. It should be as short as practical. Since this connection has fast voltage tr ansi tions, keeping this connection short will minimize EMI. The connection between the output induc tor and the sense resistor should be a wide trace or copper ar ea, there are no fast voltage or current t r ansi tions in this connection and length is not so i mportant, however adding unnec­essary impedance will reduce efficiency.
12V IN
24 23 22 21 20 19 18 17 16 15 14 13
Q2
Cin
5V
+
1.00k
4uH
2.32k
5mOhm
Cout
Vout
+
5V Vo Lin1
+
Cin Lin
Layout diagram for the SC1182/3
© 1998 SEMTECH CORP.
RB1
RB2
RA1
RA2
Q3
Q4
Cout Lin1
Cout Lin2
Heavy lines indicate high current paths.
+
For SC1182, RA1, RA2, RB1 and RB2 are not required. LDOS1 connects to Vo Lin1, LDOS2 connects to Vo Lin2
Vo Lin2
+
8
652 MITCHELL ROA D NE WBURY PARK CA 91320
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August 25, 1998
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
SC1182/3
4) The Output Capac itor(s) (Cout) should be locat ed as close to the load as possible, fast transient load currents are supplied by Cout only, and connections between Cout and the load must be short, wide cop­per areas to mi nimize induct anc e and r esi stanc e.
5) The SC1182/3 i s best pl ac ed over a quiet ground plane area, avoid pulse currents in t he Cin, Q1, Q2 loop flowing in this area. PGNDH and PGNDL should be returned to the gr ound plane close to the package. The AGND pin shoul d be c onnec ted to the ground side of (one of) the output capacitor(s). If thi s i s not possible, the AG ND pin may be connected to the ground path between the Output Capacitor(s) and the Cin, Q1, Q2 loop. Under no circumstances should AGND be returned t o a gr ound inside the Cin, Q1, Q 2 loop.
6) Vcc for the SC1182/3 shoul d be supplied from the
5V
5V supply through a 10Ω resistor, the Vcc pin should be decoupled direc tly to AGND by a 0.1µF ceramic capacitor, trace lengths should be as short as possi-
ble.
7) The Current Sense resistor and the divider ac r oss it should form as small a l oop as possible, the traces running back to CS + and CS- on the SC1182/3 should run parall el and close to each other. The
0.1µF capacit or shoul d be mounted as close to the CS+ and CS- pi ns as possible.
8) Ideall y , the grounds for the two LDO sections should be returned to t he gr ound si de of (one of) the output capaci tor(s).
+
Currents in various parts of the power section
Vout
+
9
© 1998 SEMTECH CORP.
652 MITCHELL ROA D NE WBURY PARK CA 91320
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August 25, 1998
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
SC1182/3
COMPONENT SELECTION
SWITCHING SECTION OUTPUT CAPACITORS - Selection begins with the most cri tical component. Because of fast transient load current requi r ements in modern microprocessor core supplies, the output capacitors must supply al l transient load current r equirements until the current in the output inductor ramps up to the new level. Output capacitor ESR is therefore one of the most important criteria. The maximum ESR can be simply calculat ed from:
V
R
ESR
t
I
t
Where
=
t
=
t
step current Transient I
For example, to meet a 100mV transient li mit with a 10A load step, the output capacitor ESR must be less than 10mΩ. To meet this kind of ESR level, t her e ar e three available capacitor technologies.
Each Capacitor Total
Technology C
(µF)
Low ESR Tantalum 330 60 6 2000 10 OS-CON 330 25 3 990 8.3 Low ESR Aluminum 1500 44 5 7500 8.8
ESR
(mΩ)
The choice of which to use is simply a cost/perfor­mance issue, with Low ESR Aluminum bei ng the cheapest, but taking up the most space.
INDUCTOR - Having decided on a suitable type and value of output capacitor, the maximum allowable value of inductor can be calculated. Too lar ge an in­ductor will produce a slow current ramp rate and will cause the output capacitor to supply more of the tran­sient load curr ent for longer - leading to an output volt­age sag below the ESR excursi on c alculated above. The maximum induc tor value m ay be c alculated from:
CR
ESR
L
()
I
t
VV
OIN
The calculated maximum inductor value assumes 100% duty cycle, so some allowance must be made. Choosing an inductor value of 50 to 75% of the calculat ed maxi­mum will guarantee that the inductor c ur r ent will ramp
excursion voltage transient MaximumV
Qty.
Rqd.C(µF)
ESR
(mΩ)
fast enough to reduc e the voltage dropped acr oss the ESR at a f aster rate than the capacitor sags, hence en­suring a good recovery from t r ansi ent with no additional excursions. We must also be concerned with rippl e c ur r ent in the output inductor and a general rule of thumb has been to allow 10% of maximum output current as rippl e c ur r ent. Note that most of the output voltage ripple is produced by the induct or ripple current flowing in the output ca­pacitor ES R. Ripple current can be calculated from:
V
I
L
RIPPLE
IN
=
fL4
OSC
Ripple current allowance will define the minimum per­mit ted inductor value.
POWER FETS - The FETs are chosen based on sev­eral cri teria with probably the most important being power dissipation and power handli ng c apability. TOP FET - The power dissipation in the t op FET is a combination of conducti on losses, switching l osses and bottom FET body diode recovery losses. a) Conduction losses are simply c alculated as:
2
RIP
OCOND
δ=
)on(DS
where
V
O
cycleduty =
δ
V
IN
b) Switching losses can be estimated by assuming a switching ti me, if we assume 100ns then:
2
10VIP
=
INOSW
or more generally,
f)tt(VI
+
P
=
SW
4
c) Body diode rec overy losses are more difficult to esti­mate, but to a first approximation, it is reasonable to as­sume that the stor ed c har ge on the bottom FET body diode will be moved through the top FET as it start s to turn on. The resul ting power dissipation in the t op FET will be:
fVQP
=
OSCINRRRR
To a first order approxim ation, it is convenient to only consider conduction losses to determine FET suitability. For a 5V in; 2.8V out at 14.2A requirement, typical FET losses would be:
OSCfrINO
© 1998 SEMTECH CORP.
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652 MITCHELL ROA D NE WBURY PARK CA 91320
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August 25, 1998
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
SC1182/3
FET type
R
DS(on)
(mΩ)
(W) Package
P
D
BUK556H 22 2.48 TO220
2
IRL2203 7.0 0.79 D
PAK
Si4410 13.5 1.53 SO-8
BOTTOM FET - Bottom FET losses are almost entirely due to conducti on. The body diode is forced into con­duction at the beginning and end of the bot tom switch conduction period, so when the FET turns on and off, there is very little voltage across it , resulting in low switching losses. Conducti on losses for the FET can be determined by:
2 OCOND
)on(DS
)1(RIP
δ=
For the ex ample above:
FET type
R
DS(on)
(mΩ)
(W) Package
P
D
BUK556H 22 1.95 TO220 IRL2203 7.0 0.62 D
2
PAK
Si4410 13.5 1.20 SO-8
INPUT CAPACITORS - since the RMS ripple current in the input capacitors may be as high as 50% of the output current , suitable capacitors must be chosen ac­cordingly . Also, during fast load transients, there may be restrictions on input di/dt. T hese restrictions require useable energy storage withi n the converter circuitry, either as extra output capacitance or, more usually, additional input capacitors. Choosi ng low ESR input capacitors will help maximize ripple rating for a given size.
Each of t he pac k age types has a characteristic thermal impedance, for the TO-220 pack age, thermal impedance is mostly determined by the heatsink used. For the surf ac e mount packages on double sided FR4, 2 oz printed circuit board mat er ial, thermal impedances of
o
C/W for the D2PAK and 80oC/W for the SO-8 are
40 readily ac hievable. T he c or r espondi ng temperature rise is detail ed below:
Temperat ur e r ise (oC) FET type Top FET Bottom FET BUK556H 49.6
(1)
39.0
(1)
IRL2203 31.6 24.8 Si4410 122.4 96 (1) Wit h 20
o
C/W Heatsink
It is apparent that single SO-8 Si4410 ar e not adequate for this application, but by using parallel pairs in each po­sition, power dissipation will be approximately halved and temperat ur e r ise reduced by a factor of 4.
© 1998 SEMTECH CORP.
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652 MITCHELL ROA D NE WBURY PARK CA 91320
Page 12
August 25, 1998
OUTLINE DRAWING
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
JEDEC MS-013AD
B17104B
SC1182/3
© 1998 SEMTECH CORP.
12
652 MITCHELL ROA D NE WBURY PARK CA 91320
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