Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1173
DESCRIPTION
·With TO-220 package
·Complement to type 2SA473
·Collector current :I
·Collector dissipation:P
APPLICATIONS
·Low frequency power amplifier
·Power regulator
PINNING
PIN DESCRIPTION
=3A
C
=10W@TC=25℃
C
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3 A
PC Collector power dissipation TC=25℃ 10 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 30 V
Collector-emitter voltage Open base 30 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1173
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0; VCB=10V;f=1MHz 35 pF
fT Transition frequency IC=0.5A ; VCE=2V 100 MHz
Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V
Collector-base breakdown voltage IC=0.5mA ;IE=0 30 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=2A IB=0.2A 0.8 V
Collector cut-off current VCB=20V;IE=0 1.0 μA
Emitter cut-off current VEB=5V; IC=0 1.0 μA
DC current gain IC=0.5A ; VCE=2V 70 240
DC current gain IC=2.5A ; VCE=2V 25
h
classifications
FE-1
O Y
70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1173
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
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