The SC1164/5 combines a synchronous voltage mode
controller with two low-dropout linear regulators
providing most of the circuitry necessary to implement
three DC/DC converters for powering advanced
microprocessors such as Pentium
The SC1164/5 switching section features an integrated
5 bit D/A converter, pulse by pulse current limiting,
integrated power good signaling, and logic compatible
shutdown. The SC1164/5 switching section operates at
a fixed frequency of 200kHz, providing an optimum
compromise between size, efficiency and cost in the
intended application areas. The integrated D/A converter provides programmability of output voltage from
2.0V to 3.5V in 100mV increments and 1.30V to 2.05V
in 50mV increments with no external components.
The SC1164/5 linear sections are low dropout regulators. The SC1164 supplies 1.5V for GTL bus and 2.5V
for non-GTL I/O.
VCC to GNDVCC-0.3 to +7V
PGND to GND± 1V
BST to GND-0.3 to +15V
Operating Temperature RangeT
Junction Temperature RangeT
Storage Temperature RangeT
Lead Temperature (Soldering) 10 secondsT
Thermal Impedance Junction to Ambient
Thermal Impedance Junction to Case
θ
θ
A
J
STG
L
JA
JC
0 to +70°C
0 to +125°C
-65 to +150°C
300°C
80°C/W
25°C/W
ELECTRICAL CHARACTERISTICS
Unless specified: VCC = 4.75V to 5.25V; GND = PGND = 0V; VOS ENSE = VO; 0mV < (CS+-CS-) < 60mV ; LDOV = 11.4V to 12.6V; TA = 25°C
PARAMETERCONDITIONSMINTYPMAX UNITS
Switching Section
Output VoltageI
Supply VoltageVCC4.57V
Supply CurrentVCC = 5.0V815mA
Load RegulationI
Line Regulation0.5%
Current Limit Voltage557085mV
Oscillator Frequency175200225kHz
Oscillator Max Duty Cycle9095%
Peak DH Sink/Source CurrentBSTH-DH = 4.5V, DH-PGNDH = 3V1A
Peak DL Sink/Source CurrentBSTL-DL = 4.5V, DL-PGNDL = 3V1A
Output Voltage Tempco65ppm/
Gain (A
)VOSENSE to V
OL
OVP threshold voltage120%
OVP source currentV
Power good threshold voltage85115%
Dead time50100ns
Linear Sections
Quiescent currentLDOV = 12V5mA
Output Voltage (LDO1 SC1164)2.475 2.500 2.525V
Output Voltage (LDO2 SC1164)1.485 1.500 1.515V
Reference Voltage (SC1165)1.252 1.265 1.278V
Feedback Pin Bias Current (SC1165)10uA
Gain (A
)LDOS (1,2) to GATE (1,2)90dB
OL
Load RegulationI
Line Regulation0.3%
Output Impedance1
1AGNDSmall Signal Analog and Digital Ground
2GATE1Gate Drive Output LDO1
3LDOS1Sense Input for LDO1
4LDOS2Sense Input for LDO2
5VCCInput Voltage
6OVPHigh Signal out if V
Open collector logic output, high if V
(1)
7PWRGOOD
within 10% of setpoint
8CS-Current Sense Input (negative)
9CS+Current Sense Input (positive)
10PGNDHPower Ground for High Side Switch
11DHHigh Side Driver Output
12PGNDLPower Ground for Low Side Switch
13DLLow Side Driver Output
14BSTLSupply for Low Side Driver
15BSTHSupply for High Side Driver
16EN
(1)
Logic low shuts down the converter;
High or open for normal operation.
Careful attention to layout requirements are necessary
for successful implementation of the SC1164/5 PWM
controller. High currents switching at 200kHz are present in the application and their effect on ground plane
voltage differentials must be understood and minimized.
1). The high power parts of the circuit should be laid out
first. A ground plane should be used, the number and
position of ground plane interruptions should be such
as to not unnecessarily compromise ground plane integrity. Isolated or semi-isolated areas of the ground
plane may be deliberately introduced to constrain
ground currents to particular areas, for example the input capacitor and bottom FET ground.
2). The loop formed by the Input Capacitor(s) (Cin), the
Top FET (Q1) and the Bottom FET (Q2) must be kept
10
1
AGND
2
GATE1
3
LDOS1
4Q1
5
6
7
8
9
10
11
12
LDOS2
VCC
OVP
PWRGOOD
CSCS+
PGNDH
DH
PGNDL
0.1uF
0.1uF
GATE2
LDVO
VID0
VID1
VID2
VID3
VID4
VOSENSE
EN
BSTH
BSTL
DL
SC1164/5
as small as possible. This loop contains all the high current, fast transition switching. Connections should be as
wide and as short as possible to minimize loop inductance. Minimizing this loop area will a) reduce EMI, b)
lower ground injection currents, resulting in electrically
“cleaner” grounds for the rest of the system and c) minimize source ringing, resulting in more reliable gate
switching signals.
3). The connection between the junction of Q1, Q2 and
the output inductor should be a wide trace or copper
region. It should be as short as practical. Since this
connection has fast voltage transitions, keeping this
connection short will minimize EMI. The connection between the output inductor and the sense resistor should
be a wide trace or copper area, there are no fast voltage or current transitions in this connection and length
is not so important, however adding unnecessary
impedance will reduce efficiency.
4) The Output Capacitor(s) (Cout) should be located
as close to the load as possible, fast transient load
currents are supplied by Cout only, and connections
between Cout and the load must be short, wide copper areas to minimize inductance and resistance.
5) The SC1164/5 is best placed over a quiet ground
plane area, avoid pulse currents in the Cin, Q1, Q2
loop flowing in this area. PGNDH and PGNDL should
be returned to the ground plane close to the package.
The AGND pin should be connected to the ground
side of (one of) the output capacitor(s). If this is not
possible, the AGND pin may be connected to the
ground path between the Output Capacitor(s) and the
Cin, Q1, Q2 loop. Under no circumstances should
AGND be returned to a ground inside the Cin, Q1, Q2
loop.
6) Vcc for the SC1164/5 should be supplied from the
5V
5V supply through a 10Ω resistor, the Vcc pin should
be decoupled directly to AGND by a 0.1µF ceramic
capacitor, trace lengths should be as short as possi-
ble.
7) The Current Sense resistor and the divider across
it should form as small a loop as possible, the traces
running back to CS+ and CS- on the SC1164/5 should
run parallel and close to each other. The 0.1µF capacitor should be mounted as close to the CS+ and
CS- pins as possible.
8) Ideally, the grounds for the two LDO sections
should be returned to the ground side of (one of) the
output capacitor(s).
SWITCHING SECTION
OUTPUT CAPACITORS - Selection begins with the
most critical component. Because of fast transient load
current requirements in modern microprocessor core
supplies, the output capacitors must supply all transient
load current requirements until the current in the output
inductor ramps up to the new level. Output capacitor
ESR is therefore one of the most important criteria. The
maximum ESR can be simply calculated from:
V
R
ESR
t
≤
I
t
Where
=
t
=
t
step current Transient I
For example, to meet a 100mV transient limit with a
10A load step, the output capacitor ESR must be less
than 10mΩ. To meet this kind of ESR level, there are
three available capacitor technologies.
The choice of which to use is simply a cost/performance issue, with Low ESR Aluminum being the
cheapest, but taking up the most space.
INDUCTOR - Having decided on a suitable type and
value of output capacitor, the maximum allowable
value of inductor can be calculated. Too large an inductor will produce a slow current ramp rate and will
cause the output capacitor to supply more of the transient load current for longer - leading to an output voltage sag below the ESR excursion calculated above.
The maximum inductor value may be calculated from:
CR
ESR
L
()
−≤
VV
I
t
OIN
The calculated maximum inductor value assumes 100%
duty cycle, so some allowance must be made. Choosing
an inductor value of 50 to 75% of the calculated maximum will guarantee that the inductor current will ramp
excursion voltage transient MaximumV
Qty.
Rqd.C(µF)
ESR
(mΩ)
fast enough to reduce the voltage dropped across the
ESR at a faster rate than the capacitor sags, hence ensuring a good recovery from transient with no additional
excursions.
We must also be concerned with ripple current in the
output inductor and a general rule of thumb has been to
allow 10% of maximum output current as ripple current.
Note that most of the output voltage ripple is produced
by the inductor ripple current flowing in the output capacitor ESR. Ripple current can be calculated from:
V
I
L
RIPPLE
IN
=
⋅⋅
fL4
OSC
Ripple current allowance will define the minimum permitted inductor value.
POWER FETS - The FETs are chosen based on several
criteria with probably the most important being power
dissipation and power handling capability.
TOP FET - The power dissipation in the top FET is a
combination of conduction losses, switching losses and
bottom FET body diode recovery losses.
a) Conduction losses are simply calculated as:
2
RIP
OCOND
δ⋅⋅=
)on(DS
where
V
O
cycleduty =
≈δ
V
IN
b) Switching losses can be estimated by assuming a
switching time, if we assume 100ns then:
2
−
⋅⋅=
10VIP
INOSW
or more generally,
⋅+⋅⋅
f)tt(VI
=
P
SW
4
c) Body diode recovery losses are more difficult to estimate, but to a first approximation, it is reasonable to assume that the stored charge on the bottom FET body
diode will be moved through the top FET as it starts to
turn on. The resulting power dissipation in the top FET
will be:
fVQP
⋅⋅=
OSCINRRRR
To a first order approximation, it is convenient to only
consider conduction losses to determine FET suitability.
For a 5V in; 2.8V out at 14.2A requirement, typical FET
losses would be:
BOTTOM FET - Bottom FET losses are almost entirely
due to conduction. The body diode is forced into conduction at the beginning and end of the bottom switch conduction period, so when the FET turns on and off, there
is very little voltage across it, resulting in low switching
losses. Conduction losses for the FET can be determined by:
2
OCOND
δ−⋅⋅=
)on(DS
)1(RIP
For the example above:
FET type
R
DS(on)
(mΩ)
(W)Package
P
D
BUK556H 221.95TO220
2
IRL22037.00.62D
PAK
Si441013.51.20SO-8
INPUT CAPACITORS - since the RMS ripple current in
the input capacitors may be as high as 50% of the output current, suitable capacitors must be chosen accordingly. Also, during fast load transients, there may
be restrictions on input di/dt. These restrictions require
useable energy storage within the converter circuitry,
either as extra output capacitance or, more usually,
additional input capacitors. Choosing low ESR input
capacitors will help maximize ripple rating for a given
size.
Each of the package types has a characteristic thermal
impedance, for the TO-220 package, thermal impedance
is mostly determined by the heatsink used. For the surface mount packages on double sided FR4, 2 oz printed
circuit board material, thermal impedances of 40
for the D
2
PAK and 80oC/W for the SO-8 are readily
o
C/W
achievable. The corresponding temperature rise is detailed below:
Temperature rise (oC)
FET typeTop FETBottom FET
BUK556H 49.6
(1)
39.0
(1)
IRL220331.624.8
Si4410122.496
o
(1) With 20
C/W Heatsink
It is apparent that single SO-8 Si4410 are not adequate for
this application, but by using parallel pairs in each position, power dissipation will be approximately halved and
temperature rise reduced by a factor of 4.