Datasheet SC1162, SC1163 Datasheet (SEMTECH)

Page 1
查询SC1162供应商
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
October 25, 1999
TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com
DESCRIPTION
The SC1162/3 combines a synchronous voltage mode controller with a low-dropout linear regulator providing most of the circuitry necessary to implement two DC/ DC converters for powering advanced microprocessors such as Pentium
The SC1162/3 switching section features an integrated 5 bit D/A converter, pulse by pulse current limiting, integrated power good signaling, and logic compatible shutdown. The SC1162/3 switching section operates at a fixed frequency of 200kHz, providing an optimum compromise between size, efficiency and cost in the intended application areas. The integrated D/A con­verter provides programmability of output voltage from
2.0V to 3.5V in 100mV increments and 1.30V to 2.05V in 50mV increments with no external components.
The SC1162/3 linear section is a high performance positive voltage regulator design for either the GTL bus supply at 1.5V (SC1162) or an adjustable output (SC1163).
The output of the linear regulator can provide up to 5A or more with the appropriate external MOSFET.
®
II.
SC1162/3
FEATURES
Synchronous design, enables no heatsink solution
95% efficiency (switching section)
5 bit DAC for output programmability
On chip power good function
Designed for Intel Pentium® II requirements
1.5V or Adj. @ 1% for linear section
1.300V-2.05V ±1.5%; 2.100V-3.500V ±2%
APPLICATIONS
Pentium® ll or Deschutes microprocessor supplies
Flexible motherboards
1.3V to 3.5V microprocessor supplies
Programmable dual power supplies
Part Number
(1)
Package
Linear
Voltage
SC1162CSW SO-24 1.5V 0° to 125°C SC1163CSW SO-24 Adj. 0° to 125°C
Temp.
Range (T
J
)
PIN CONFIGURATION
Top View
(24 Pin SOIC)
Note: (1) Add suffix ‘TR’ for tape and reel.
BLOCK DIAGRAM
VCC CS+CS-
1.25 REF VCC
VID4 VID3 VID2 VID1 VID0
VOSENSE
PWRGOOD
OVP
D/A & SHUT­DOWN LOGIC
OPEN COLLECTORS
VCC
AGND
70mV
CURRENT LIMIT
OSCILLATOR
ERROR
AMP
1.265V REF
R
Q
S
FET
CONTROLLER
EN
BSTH
LEVEL SHIFT AND HIGH SIDE MOSFET DRIVE
SHOOT-
THRU
CONTROL
SYNCHRONOUS
MOSFET DRIVER
DH
PGNDH
BSTL
DL
PGNDL
© 1999 SEMTECH CORP.
LDOV
Pentium is a registered trademark of Intel Corporation
GATE LDOS
1
652 MITCHELL ROAD NEWBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT
SC1162/3
REGULATOR CONTROLLER
October 25, 1999
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Maximum Units
V
to GND V
CC
IN
-0.3 to +7 V
PGND to GND ± 1 V BST to GND -0.3 to +15 V Operating Temperature Range T
Junction Temperature Range T Storage Temperature Range T Lead Temperature (Soldering) 10 seconds T Thermal Impedance Junction to Ambient Thermal Impedance Junction to Case
θ θ
A
J
STG
L
JA
JC
0 to +70 °C
0 to +125 °C
-65 to +150 °C 300 °C
80 25
°
C/W
°
C/W
ELECTRICAL CHARACTERISTICS
Unless specified: V
PARAMETER CONDITIONS MIN TYP MAX UNITS Switching Section
Output Voltage I Supply Voltage V Supply Current V Load Regulation I Line Regulation 0.5 % Minimum operating voltage 4.2 V Current Limit Voltage 55 70 85 mV Oscillator Frequency 175 200 225 kHz Oscillator Max Duty Cycle 90 95 % DH Sink/Source Current DL Sink/Source Current Output Voltage Tempco 65 ppm/ Gain (A
)V
OL
OVP threshold voltage 120 % OVP source current V Power good threshold voltage 85 115 % Dead time 50 100 ns
Linear Section
Quiescent current LDOV = 12V 5 mA Output Voltage (SC1162) 1.485 1.500 1.515 V Reference Voltage (SC1163) 1.252 1.265 1.278 V Feedback Pin Bias Current (SC1163) 10 uA Gain (A
) LDOS to GATE 90 dB
OL
Load Regulation I Line Regulation 0.3 % Output Impedance 200
= 4.75V to 5.25V; GND = P
CC
GND
= 0V; V
= VO; 0mV < (CSp-CSm) < 60mV; LDOV = 11.4V to 12.6V; TA = 25oC
OSENSE
= 2A See Note 1.
O
CC
= 5.0 8 15 mA
CC
= 0.8A to 15A 1 %
O
BSTH-DH = 4.5V, DH-PGNDH = 2V BSTL-DL = 4.5V, DL-PGNDL = 2V
to V
OSENSE
= 3.0V 10 mA
OVP
= 0 to 8A
O
O
(2)
4.2 7 V
1A 1A
35 dB
0.3 %
o
C
Notes:
(1) See Output Voltage table
(2) In application circuit
© 1999 SEMTECH CORP.
2
652 MITCHELL ROAD NEWBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
October 25, 1999
PIN DESCRIPTION
Pin Pin Name Pin Function
1 AGND Small Signal Analog and Digital Ground 2 NC No connection 3 NC No Connection 4 LDOS Sense Input for LDO 5 VCC Input Voltage 6 OVP High Signal out if V
Open collector logic output, high if V
(1)
7 PWRGOOD
within 10% of setpoint 8 CS- Current Sense Input (negative) 9 CS+ Current Sense Input (positive)
10 PGNDH Power Ground for High Side Switch 11 DH High Side Driver Output 12 PGNDL Power Ground for Low Side Switch 13 DL Low Side Driver Output 14 BSTL Supply for Low Side Driver 15 BSTH Supply for High Side Driver 16 EN
(1)
Logic low shuts down the converter;
High or open for normal operation.
17 VOSENSE Top end of internal feedback chain 18 VID4 19 VID3 20 VID2 21 VID1 22 VID0
(1) (1) (1) (1) (1)
Programming Input (MSB)
Programming Input
Programming Input
Programming Input
Programming Input (LSB)
23 LDOV +12V for LDO section 24 GATE Gate Drive Output LDO
>setpoint +20%
O
Top View
AGND
NC
NC
O
LDOS
VCC OVP
PWRGOOD
CS-
CS+
PGNDH
DH
PGNDL
10 11 12
1 2 3 4 5 6 7 8 9
24 23 22 21 20 19 18 17 16 15 14 13
(24 Pin SOIC)
Note: (1) All logic level inputs and outputs are open collector TTL compatible.
SC1162/3
GATE
LDOV VID0 VID1 VID2 VID3 VID4 VOSENSE EN BSTH BSTL DL
© 1999 SEMTECH CORP.
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652 MITCHELL ROAD NEWBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
October 25, 1999
OUTPUT VOLTAGE
Unless specified: VCC = 5.00V; GND = PGND = 0V; VOSENSE = VO; 0mV < (CSp-CSm) < 60mV; T
PARAMETER CONDITIONS VID
Output Voltage I
= 2A in Application Circuit 01111 1.281 1.300 1.320
O
43210
01110 1.330 1.350 1.370 01101 1.379 1.400 1.421 01100 1.428 1.450 1.472 01011 1.478 1.500 1.523 01010 1.527 1.550 1.573 01001 1.576 1.600 1.624 01000 1.625 1.650 1.675 00111 1.675 1.700 1.726 00110 1.724 1.750 1.776 00101 1.773 1.800 1.827 00100 1.822 1.850 1.878 00011 1.872 1.900 1.929 00010 1.921 1.950 1.979 00001 1.970 2.000 2.030 00000 2.019 2.050 2.081 11111 1.960 2.000 2.040 11110 2.058 2.100 2.142 11101 2.156 2.200 2.244 11100 2.254 2.300 2.346 11011 2.352 2.400 2.448 11010 2.450 2.500 2.550 11001 2.548 2.600 2.652 11000 2.646 2.700 2.754 10111 2.744 2.800 2.856 10110 2.842 2.900 2.958 10101 2.940 3.000 3.060 10100 3.038 3.100 3.162 10011 3.136 3.200 3.264 10010 3.234 3.300 3.366 10001 3.332 3.400 3.468 10000 3.430 3.500 3.570
MIN TYP MAX UNITS
= 25oC
A
SC1162/3
© 1999 SEMTECH CORP.
4
652 MITCHELL ROAD NEWBURY PARK CA 91320
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October 25, 1999
APPLICATION CIRCUIT
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
SC1162/3
R5
R6
R16
2.32k
1.00k
C13
10k
0.1uF Q1
BUK556
C17
C15
R4
1500uF
1500uF
5mOhm
L1
VCC_CORE
4uH
Q2
BUK556
GND
C18
0.1uF
+
+
C16
C14
1500uF
1500uF
+
+
VLIN
+
C12
330uF
+
100K
R17
WITHOUT 12V BEING PRESENT
R17 REQUIRED IF VINLIN CAN BE PRESENT
* SEE "SETTING LDO OUTPUT VOLTAGE" TABLE
CONNECT LDOS (PIN4) DIRECTLY TO VLIN
TO GENERATE 1.5V OUTPUT.
Q3
BUK556
C21
*
R13
R12
+
*
330uF
NOTES: FOR SC1162, R12 AND R13 ARE NOT REQUIRED
12V
9
17
18
CS-
CS+
VCC5OVP
U1
6
R1
10
+
+
5V
C1
0.1uF
C3
C2
1500uF
1500uF
VO SENSE
VID0
22
PWRGOOD
VID1
21
VID4
VID2
20
15
19
BSTH
VID3
10DH11
13
14
23
4
DL
BSTL
LDOV
24
GATE
VID1
2
NC
VID2
LDOS
NC
3
VID3
SC1162/3CSW
PWRGD
VID4
5V
PGNDH
AGND
EN
PGNDL
1
16
12
C5
0.1uF
EN
OVP
VID0
7
8
5
© 1999 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
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PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
October 25, 1999
MATERIALS LIST
Qty. Reference Part/Description Vendor Notes
4 C1,C5,C13,C180.1µF Ceramic Various
SC1162/3
6 C2,C3,C14-
C17
3 C11,C12,
C21
1 L1 4µH 8 Turns 16AWG on MICROMETALS T50-52D core 3 Q1,Q2,Q3 See notes See notes FET selection requires trade-off between efficiency and
1R4 1R5 1R6 1R1 1 R12 1%, 1/8W Various See Table (Not required for SC1162) 1 R13 1%, 1/8W Various See Table (Not required for SC1162) 1 R17 100k, 5%, 1/8W Various Required if Voltage is applied to the linear FET without
1 U1 SC1162/3CSW SEMTECH
1500µF/6.3V SANYO MV-GX or equiv. Low ESR
330µF/6.3V Various
cost. Absolute maximum R
5m
2.32kΩ, 1%, 1/8W 1kΩ, 1%, 1/8W 10Ω, 5%, 1/8W
IRC OAR-1 Series Various Various Various
12V applied to SC1162/3
= 22 mΩ for Q1,Q2
DS(ON)
SETTING LDO OUTPUT VOLTAGE
R
B
VO LDO R12 R13
3.45V
3.30V
3.10V
2.90V
2.80V
2.50V
1.50V
© 1999 SEMTECH CORP.
105 105 102 100 100 100 100
Ω Ω Ω Ω Ω Ω Ω
R
A
182 169 147 130 121
97.6
18.7
V
OUT
=
R
B
BA
+
)RI(
AFB
+
)RR(265.1
:Where
Ω Ω Ω Ω Ω
Ω Ω
FB
=
=
A
=
B
current bias pinFeedback I
resistorfeedback Top R
resistorfeedback BottomR
ionclarificatfor diagramlayout See
BA
AFB
so enoughlow bemust Rand R causenot does term)RI( that the
errort significan
652 MITCHELL ROAD NEWBURY PARK CA 91320
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October 25, 1999
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
SC1162/3
95%
90%
85%
Efficiency
80%
75%
70%
0 2 4 6 8 10121416
3.5V Std
3.5V Sync
3.5V Sync Lo Rds
Io (Amps)
Typical Efficiency at Vo=3.5V
95%
90%
85%
Efficiency
80%
75%
2.5V Std
2.5V Sync
2.5V Sync Lo Rds
95%
90%
85%
Efficiency
80%
75%
70%
0 2 4 6 8 10 12 14 16
2.8V Std
2.8V Sync
2.8V Sync Lo Rds
Io (Amps)
Typical Efficiency at Vo=2.8V
95%
90%
85%
Efficiency
80%
75%
2.0V Std
2.0V Sync
2.0V Sync Lo Rds
70%
0 2 4 6 8 10 12 14 16
Io (Amps)
Typical Efficiency at Vo=2.5V
Typical Ripple, Vo=2.8V, Io=10A
70%
0 2 4 6 8 10 12 14 16
Io (Amps)
Typical Efficiency at Vo=2.0V
Transient Response Vo=2.8V, Io=300mA to 10A
© 1999 SEMTECH CORP.
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652 MITCHELL ROAD NEWBURY PARK CA 91320
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October 25, 1999
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
SC1162/3
LAYOUT GUIDELINES
Careful attention to layout requirements are necessary for successful implementation of the SC1162/3 PWM controller. High currents switching at 200kHz are pre­sent in the application and their effect on ground plane voltage differentials must be understood and mini­mized.
1). The high power parts of the circuit should be laid out first. A ground plane should be used, the number and position of ground plane interruptions should be such as to not unnecessarily compromise ground plane in­tegrity. Isolated or semi-isolated areas of the ground plane may be deliberately introduced to constrain ground currents to particular areas, for example the in­put capacitor and bottom FET ground.
2). The loop formed by the Input Capacitor(s) (Cin), the Top FET (Q1) and the Bottom FET (Q2) must be kept
10
1
AGND
2
NC
3
NC
4 Q1
LDOS
0.1uF
5
VCC
6
OVP
7
PWRGOOD
0.1uF 8
CS­CS+ PGNDH DH PGNDL
VO SENSE
SC1162/3
9
10 11 12
GATE LDOV
VID0 VID1 VID2 VID3 VID4
BSTH
BSTL
24 23 22 21 20 19 18 17 16
EN
15 14 13
DL
as small as possible. This loop contains all the high cur­rent, fast transition switching. Connections should be as wide and as short as possible to minimize loop induc­tance. Minimizing this loop area will a) reduce EMI, b) lower ground injection currents, resulting in electrically “cleaner” grounds for the rest of the system and c) mini­mize source ringing, resulting in more reliable gate switching signals.
3). The connection between the junction of Q1, Q2 and the output inductor should be a wide trace or copper region. It should be as short as practical. Since this connection has fast voltage transitions, keeping this connection short will minimize EMI. The connection be­tween the output inductor and the sense resistor should be a wide trace or copper area, there are no fast volt­age or current transitions in this connection and length is not so important, however adding unnecessary impedance will reduce efficiency.
12V IN
5V
Cin
+
Q2
4uH
1.00k
2.32k
5mOhm
Cout
Vout
+
5V Vo Lin
+
Cin Lin
Layout diagram for the SC1162/3
© 1999 SEMTECH CORP.
RA
Q3
RB
Cout Lin
+
For SC1162, RA and RB
Heavy lines indicate high current paths.
are not required. LDOS connects to Vo Lin
8
652 MITCHELL ROAD NEWBURY PARK CA 91320
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October 25, 1999
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
SC1162/3
4) The Output Capacitor(s) (Cout) should be located as close to the load as possible, fast transient load currents are supplied by Cout only, and connections between Cout and the load must be short, wide cop­per areas to minimize inductance and resistance.
5) The SC1162/3 is best placed over a quite ground plane area, avoid pulse currents in the Cin, Q1, Q2 loop flowing in this area. PGNDH and PGNDL should be returned to the ground plane close to the package. The AGND pin should be connected to the ground side of (one of) the output capacitor(s). If this is not possible, the AGND pin may be connected to the ground path between the Output Capacitor(s) and the Cin, Q1, Q2 loop. Under no circumstances should AGND be returned to a ground inside the Cin, Q1, Q2 loop.
6) Vcc for the SC1162/3 should be supplied from the
5V
5V supply through a 10Ω resistor, the Vcc pin should be decoupled directly to AGND by a 0.1µF ceramic capacitor, trace lengths should be as short as possi-
ble.
7) The Current Sense resistor and the divider across it should form as small a loop as possible, the traces running back to CS+ and CS- on the SC1162/3 should run parallel and close to each other. The 0.1µF ca­pacitor should be mounted as close to the CS+ and CS- pins as possible.
8) Ideally, the ground for the LDO section should be returned to the ground side of (one of) the switching section output capacitor(s).
+
Currents in various parts of the power section
Vout
+
9
© 1999 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
Page 10
October 25, 1999
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
SC1162/3
COMPONENT SELECTION
SWITCHING SECTION OUTPUT CAPACITORS - Selection begins with the most critical component. Because of fast transient load current requirements in modern microprocessor core supplies, the output capacitors must supply all transient load current requirements until the current in the output inductor ramps up to the new level. Output capacitor ESR is therefore one of the most important criteria. The maximum ESR can be simply calculated from:
V
R
ESR
t
I
t
Where
=
V
t
=
I
t
stepcurrent Transient
For example, to meet a 100mV transient limit with a 10A load step, the output capacitor ESR must be less than 10mΩ. To meet this kind of ESR level, there are three available capacitor technologies:
Each Capacitor Total
Technology C
(µF)
Low ESR Tantalum 330 60 6 2000 10 OS-CON 330 25 3 990 8.3 Low ESR Aluminum 1500 44 5 7500 8.8
ESR
(mΩ)
The choice of which to use is simply a cost /perfor­mance issue, with Low ESR Aluminum being the cheapest, but taking up the most space.
INDUCTOR - Having decided on a suitable type and value of output capacitor, the maximum allowable value of inductor can be calculated. Too large an in­ductor will produce a slow current ramp rate and will cause the output capacitor to supply more of the tran­sient load current for longer - leading to an output volt­age sag below the ESR excursion calculated above. The maximum inductor value may be calculated from:
CR
ESR
()
L
I
t
VV
OIN
The calculated maximum inductor value assumes 100% duty cycle, so some allowance must be made. Choosing an inductor value of 50 to 75% of the calculated maxi­mum will guarantee that the inductor current will ramp
excursion voltage transientMaximum
Qty.
Rqd.C(µF)
ESR
(mΩ)
fast enough to reduce the voltage dropped across the ESR at a faster rate than the capacitor sags, hence en­suring a good recovery from transient with no additional excursions. We must also be concerned with ripple current in the output inductor and a general rule of thumb has been to allow 10% of maximum output current as ripple current. Note that most of the output voltage ripple is produced by the inductor ripple current flowing in the output capac­itor ESR. Ripple current can be calculated from:
V
IN
=
I
L
RIPPLE
4
fL
OSC
Ripple current allowance will define the minimum permit­ted inductor value.
POWER FETS - The FETs are chosen based on several criteria with probably the most important being power dissipation and power handling capability. TOP FET - The power dissipation in the top FET is a combination of conduction losses, switching losses and bottom FET body diode recovery losses. a) Conduction losses are simply calculated as:
2
RIP
=
δ
)(
onDSOCOND
where
V
O
δ
b) Switching losses can be estimated by assuming a switching time, if we assume 100ns then:
or more generally,
P
=
SW
c) Body diode recovery losses are more difficult to esti­mate, but to a first approximation, it is reasonable to as­sume that the stored charge on the bottom FET body diode will be moved through the top FET as it starts to turn on. The resulting power dissipation in the top FET will be:
To a first order approximation, it is convenient to only consider conduction losses to determine FET suitability. For a 5V in; 2.8V out at 14.2A requirement, typical FET losses would be:
cycleduty =
V
IN
2
10
=
VIP
INOSW
)(
fttVI
+
OSCfrINO
4
=
fVQP
OSCINRRRR
© 1999 SEMTECH CORP.
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652 MITCHELL ROAD NEWBURY PARK CA 91320
Page 11
October 25, 1999
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
SC1162/3
FET type
R
DS(on)
(mΩ)
(W) Package
P
D
BUK556H 22 2.48 TO220
2
IRL2203 7.0 0.79 D
PAK
Si4410 13.5 1.53 SO-8
BOTTOM FET - Bottom FET losses are almost entirely due to conduction. The body diode is forced into conduc­tion at the beginning and end of the bottom switch con­duction period, so when the FET turns on and off, there is very little voltage across it, resulting in low switching losses. Conduction losses for the FET can be deter­mined by:
2
RIP
)(
onDSOCOND
)1(
δ
=
For the example above:
FET type
R
DS(on)
(mΩ)
(W) Package
P
D
BUK556H 22 1.95 TO220
2
IRL2203 7.0 0.62 D
PAK
Si4410 13.5 1.20 SO-8
INPUT CAPACITORS - since the RMS ripple current in the input capacitors may be as high as 50% of the out­put current, suitable capacitors must be chosen ac­cordingly. Also, during fast load transients, there may be restrictions on input di/dt. These restrictions require useable energy storage within the converter circuitry, either as extra output capacitance or, more usually, additional input capacitors. Choosing low ESR input capacitors will help maximize ripple rating for a given size.
Each of the package types has a characteristic thermal impedance, for the TO-220 package, thermal impedance is mostly determined by the heatsink used. For the sur­face mount packages on double sided FR4, 2 oz printed circuit board material, thermal impedances of 40 for the D
2
PAK and 80oC/W for the SO-8 are readily
o
C/W
achievable. The corresponding temperature rise is de­tailed below:
Temperature rise (oC) FET type Top FET Bottom FET BUK556H 49.6
(1)
39.0
(1)
IRL2203 31.6 24.8 Si4410 122.4 96
o
(1) With 20
C/W Heatsink
It is apparent that single SO-8 Si4410 are not adequate for this application, but by using parallel pairs in each posi­tion, power dissipation will be approximately halved and temperature rise reduced by a factor of 4.
© 1999 SEMTECH CORP.
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652 MITCHELL ROAD NEWBURY PARK CA 91320
Page 12
October 25, 1999
OUTLINE DRAWING
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER
JEDEC MS-013AD
B17104B
SC1162/3
ECN99-667
© 1999 SEMTECH CORP.
12
652 MITCHELL ROAD NEWBURY PARK CA 91320
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