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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1061
DESCRIPTION
·With TO-220 package
·Low saturation voltage
·Complement to type 2SA671
·Note: type 2SC1060 with short pin
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current-peak 8 A
IB Base current (DC) 0.5 A
PC Collector power dissipation
Tj Junction temperature 150
T
stg
Collector-base voltage Open emitter 50 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 4 V
T
=25℃
C
Storage temperature -55~150
25 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 5.0 ℃/W
th j-a
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1061
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=1A ; VCE=4V 1.5 V
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=4V 5.0 MHz
Collector-emitter breakdown voltage IC=50mA ;IB=0 50 V
Collector-base breakdown voltage IC=5mA ;IE=0 50 V
Emitter-base breakdown voltage IE=5mA ;IC=0 4 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V
Collector cut-off current VCB=25V;IE=0 0.1 mA
Emitter cut-off current VEB=4V; IC=0 0.1 mA
DC current gain IC=0.1A ; VCE=4V 35
DC current gain IC=1A ; VCE=4V 35 320
h
classifications
FE-2
A B C D
35-70 60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1061
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1061
4
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