Page 1
Features
S
· Guard Ring Die Construction for
TCUDORPWEN
Transient Protection
· Low Power Loss, High Efficiency
· Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: POWERMITEâ3, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Moisture sensitivity: Level 1 per J-STD-020A
· Polarity: See Diagram
· Marking: Type Number, See also Sheet 3
· Weight: 0.072 grams (approx.)
· Ordering Information, See Sheet 3
SBM540
5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
A
E
P
3
J
B
12
M
D
C
PIN 1
PIN 2
Note: Pins 1 & 2 must be electrically
connected at the printed circuit board.
C
K
L
PIN 3, BOTTOMSIDE
INK
HEAT
G
H
POWERMITEâ3
A
B
C
D
E
G
H
J
K
L
M
P
Min Max
4.03 4.09
6.40 6.61
.889 NOM
1.83 NOM
1.10 1.14
.178 NOM
5.01 5.17
4.37 4.43
.178 NOM
.71 .77
.36 .46
1.73 1.83
Dim
All Dimensions in mm
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method) @ T
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
Characteristic Symbol
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Reverse Current (Note 1)
Total Capacitance
@ TA = 25°C unless otherwise specified
Characteristic Symbol
= 90°C
C
@ TA = 25°C unless otherwise specified
V
(BR)R
V
FM
I
RM
C
Value
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJS
T
j
T
STG
Min Typ Max Unit
40 ¾¾V
0.48
¾
0.45
¾
0.59
¾
0.56
¾
¾
0.05
¾
T
¾ 250 ¾ pF
2.5
0.52
¾
¾
¾
0.5
20
40 V
28 V
5A
100 A
3.2 °C/W
-55 to +125 °C
-55 to +150 °C
Test Condition
IR = 0.5mA
I
= 5A, TS = 25°C
F
= 5A, TS = 125°C
I
F
V
I
= 10A, TS = 25°C
F
I
= 10A, TS = 125°C
F
TS = 25°C, VR = 40V
mA
= 100°C, VR = 40V
T
S
f = 1.0MHz, V
Unit
= 4.0V DC
R
Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30297 Rev. 3 - 2 1 of 3 SBM540
www.diodes.com
Page 2
100
100
g
TCUDORPWEN
O
10
1.0
T = 100°C
J
T = 25° C
J
10
1.0
0.1
T = 125°C
J
T = 100°C
J
T = 75°C
J
0.1
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.01
0
0.2 0.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.6
0.8
Fig. 1 Typical Forward Characteristics
125
100
Single Half-Sine-Wave
(JEDEC Method)
T = 90°C
C
75
50
25
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
110100
TAL CAPACITANCE (pF)
T
C,T
0.01
0.001
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
10
5
15
20
T = 25°C
J
25
30
Fig. 2 Typical Reverse Characteristics
1000
100
10
0.1 1 10 100
35 40
T = 25°C
j
f=1MHz
. 3 Max Non-Repetitive Peak Forward Surge Current
NUMBER OF CYCLES AT 60 Hz
Fi
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Total Capacitance
vs. Reverse Voltage
DS30297 Rev. 3 - 2 2 of 3 SBM540
www.diodes.com
Page 3
7
g
TCUDORPWEN
6.0
.5
4
2
dc
Note 1
3.5
3
T = 125°C
j
4.5
Note 2
2.5
2
3.0
1.5
F(AV)
P , AVERAGE FORWARD POWER DISSIPATION (W)
1
0.5
0
0
I , DC FORWARD CURRENT (A)
F
1.5
Note 3
0
0
25
50
T , AMBIENT TEMPERATURE (°C)
A
75
100
125
150
Fig. 5 DC Forward Current Deratin
Notes: 1. TA = T
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
60-75°C/W.
SOLDERING POINT
Ordering Information
Device
SBM540-13
, R
qJS
qJA
(Note 4)
= 3.2°C/W, R
in range of 15-30°C/W.
qSA
= 0°C/W.
Packaging Shipping
POWERMITEâ3 5000/Tape & Reel
3
1
I , AVERAGE FORWARD CURRENT (A)
F(AV)
3
2
Fig. 6 Forward Power Dissipation
5
4
6
7
in range of
qJA
8
9
10
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SBM540
YYWW(K)
SBM540 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW=Weekcode01to52
(K) = Factory Designator
POWERMITE is a registered trademark of Microsemi Corporation.
DS30297 Rev. 3 - 2 3 of 3 SBM540
www.diodes.com
Loading...