Datasheet SBM1040 Datasheet (DIODES)

Features

S

Guard Ring Die Construction for

·

Transient Protection Low Power Loss, High Efficiency

·

High Surge Capability

·

High Max Junction Temperature Rating

·

Very Low Forward Voltage Drop

·

Very Low Leakage Current

·

For Use in Low Voltage, High Frequency

·

Inverters, Free Wheeling, and Polarity Protection Applications

Plastic Material: UL Flammability

·

NEW PRODUCT

Classification Rating 94V-0

Mechanical Data

· Case: POWERMITEâ3, Molded Plastic Terminals: Solderable per MIL-STD-202,

·

Method 208

· Polarity: See Diagram

· Weight: 0.072 grams (approx.)

· Marking information: See sheet 3

SBM1040

10A LOW VF SCHOTTKY BARRIER RECTIFIER

POWERMITEâ3

A

E

P

3

J

B

12

M

D

C

PIN 1

PIN 2

Note: Pins 1 & 2 must be electrically

connected at the printed circuit board.

C

K

L

PIN 3, BOTTOMSIDE HEAT

INK

G

H

POWERMITEâ3

A

B

C

D

E

G

H

J

K

L

M

P

Min Max

4.03 4.09

6.40 6.61

.889 NOM

1.83 NOM

1.10 1.14

.178 NOM

5.01 5.17

4.37 4.43

.178 NOM

.71 .77

.36 .46

1.73 1.83

Dim

All Dimensions in mm

Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current (see also Figure 4)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @TC = 88°C

Typical Thermal Resistance Junction to Soldering Point

Operating Temperature Range

Storage Temperature Range

Electrical Characteristics

Characteristic Symbol

Reverse Breakdown Voltage (Note 1)

Forward Voltage (Note 1)

Peak Reverse Current (Note 1)

Junction Capacitance

Notes: 1. Short duration test pulse used to minimize self-heating effect.

@ TA= 25°C unless otherwise specified

Characteristic Symbol

@ TA= 25°C unless otherwise specified

V

(BR)R

V

FM

I

RM

C

j

V

RRM

V

RWM

V

R

V

R(RMS)

I

O

I

FSM

R

qJS

T

j

T

STG

Min Typ Max Unit

40 ¾¾V

¾

0.45

¾ ¾

¾ 700 ¾ pF

¾

0.47

0.1

12.5

Value

40 V

28 V

10 A

150 A

2.5 °C/W

-65 to +150 °C

Test Condition

= 1mA

I

R

= 8A, TS= 25°C

0.49

0.41

0.51

0.3 25

V

mA

I

F

I

F

I

F

T

S

T

S

f = 1.0MHz, V

= 8A, TS= 125°C = 10A, TS= 25°C

= 25°C, VR= 35V = 100°C, VR= 35V

Unit

= 4.0V DC

R

DS30255 Rev. F-2 1 of 3 SBM1040

O

100

O

e

12

g

10

1

WARD CURRENT (A) R

0.1

US F

0.01

NEW PRODUCT

0.001

F

0.0001

I , INSTANTANE

0

T = +150 CA°

100

200

T = +75 C

A

300

T = +25 CA°

°

400

500

600

A)

m

US REVERSE CURRENT (

R

I , INSTANTANE

1000

100

10

0.1

0.01

T = +150ºC

A

T = +100ºC

A

1

0

10

5

15

20

T = +75ºC

A

25 30

T = +25ºC

A

35

40

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

Fig. 1 Typical Forward Characteristics

10,000

f = 1MHz

ACITANCE (pF)

1000

N CAP

j

C , JUNCTI

100

5

015

10

V , REVERSE VOLTAGE (V)

R

20

25

30

Fig. 3 Typical Junction Capacitance vs. Reverse Voltag

Notes: 1. TA= T

2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. R

3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R

60-75°C/W.

SOLDERING POINT

, R

= 2.5°C/W, R

qJS

in range of 15-30°C/W.

qJA

35

qSA

40

= 0°C/W.

F

I , DC FORWARD CURRENT (A)

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Fig. 2 Typical Reverse Characteristics

.5

10.0 Note 1

7.5

Note 2

5.0 Note 3

2.5

0

25

50

T , AMBIENT TEMPERATURE (°C)

A

. 4 DC Forward Current Deratin

Fi

75

100

qJA

125

in range of

150

DS30255 Rev. F-2 2 of 3 SBM1040

8

)

g

2

7

6

5

4

3

NEW PRODUCT

2

1

0

F(AV)

P , AVERAGE FORWARD POWER DISSIPATION (W

0

T = 150°C

j

1

dc

2

1.5

I , AVERAGE FORWARD CURRENT (A)

F(AV)

4.5

3

. 5 Forward Power Dissipation

Fi

7.5

6

9

10.5

12

13.5

15

Notes: 1. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad

Ordering Information

Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

dimensions 0.25” x 1.0”. R

2. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R

60-75°C/W.

(Note 3)

Device

SBM1040-13

in range of 15-30°C/W.

qJA

Packaging Shipping

POWERMITEâ3 5000/Tape & Reel

in range of

Marking Information

SBM1040

YYWW

SBM1040 = Product type marking code

= Manufacturers’ code marking

YYWW = Date code marking

YY = Last two digits of year ex: 02 for 200 WW = Week code 01 to 52

POWERMITE is a registered trademark of MicroSemi Corporation.

DS30255 Rev. F-2 3 of 3 SBM1040