Page 1
BAW56L, SBAW56L
s
Dual Switching Diode
Common Anode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Forward Surge Current
(60 Hz @ 1 cycle)
Non−Repetitive Peak Forward Current
t = 1 ms (Note 3)
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
I
FSM
I
FSM
I
FRM
R
F
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate,
(Note 2) T
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave; T
= 25°C
A
= 25°C.
j
P
D
R
q
JA
P
D
R
q
JA
stg
70 V
200 mA
2.0 A
4.0 A
500 mA
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to
+150
mW/°C
mW/°C
mW
mW
°C
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SOT−23 (TO−236)
CASE 318
STYLE 12
CATHODE
ANODE
3
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
BAW56LT1G SOT−23
(Pb−Free)
SBAW56LT1G SOT−23
(Pb−Free)
BAW56LT3G SOT−23
(Pb−Free)
SBAW56LT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
†
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10
1 Publication Order Number:
BAW56LT1/D
Page 2
BAW56L, SBAW56L
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage
= 100 mA)
(I
(BR)
Reverse Voltage Leakage Current
(V
= 25 V, TJ = 150°C)
R
= 70 V)
(V
R
(V
= 70 V, TJ = 150°C)
R
Diode Capacitance
(V
= 0 V, f = 1.0 MHz)
R
Forward Voltage
(I
= 1.0 mA)
F
(IF = 10 mA)
(IF = 50 mA)
(I
= 150 mA)
F
Reverse Recovery Time
= IR = 10 mA, I
(I
F
= 1.0 mA) (Figure 1) RL = 100 W
R(REC)
= 25°C unless otherwise noted) (Each Diode)
A
Symbol Min Max Unit
V
(BR)
I
R
C
V
t
rr
D
F
70 −
−
−
−
− 2.0
−
−
−
−
715
855
1000
1250
− 6.0
30
2.5
50
V
mA
pF
mV
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
+10 V
50 W OUTPUT
PULSE
GENERATOR
820
W
I
2.0 k
100 mH
t
t
r
I
0.1 mF
F
p
10%
t
F
t
rr
t
0.1 mF
D.U.T.
50 W INPUT
SAMPLING
V
R
OSCILLOSCOPE
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
90%
INPUT SIGNAL
= 1.0 mA
i
I
R
R(REC)
OUTPUT PULSE
= IR = 10 mA; MEASURED
(I
F
at i
= 1.0 mA)
R(REC)
Figure 1. Recovery Time Equivalent Test Circuit
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2
Page 3
BAW56L, SBAW56L
Curves Applicable to Each Cathode
0
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4
1.75
1.5
1.25
TA = 85°C
TA = 25°C
0.6 0.8 1.0
, FORWARD VOLTAGE (VOLTS)
V
F
TA = -40°C
1.2
, REVERSE CURRENT (μA)
R
I
0.001
1.0
0.1
0.01
10
0
10 20 30 40
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage Figure 3. Leakage Current
12
10
8
Based on square wave currents
= 25°C prior to surge
T
J
6
50
, DIODE CAPACITANCE (pF)
1.0
D
C
0.75
0
4
2
, FORWARD SURGE MAX CURRENT (A)
0
2468
V
, REVERSE VOLTAGE (VOLTS)
R
FSM
I
0.001
Figure 4. Capacitance
0.01 0.1 1 100
t
, PULSE ON TIME (ms)
P
10010
Figure 5. Forward Surge Current
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3
Page 4
BAW56L, SBAW56L
P
al
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
H
E
T
L
3X
b
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
L1
H
E
STYLE 12:
PIN 1. CATHODE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.027
2.10 2.40 2.64 0.083 0.094 0.104
0 −−− 10 0 −−− 10T°°°°
2. CATHODE
3. ANODE
INCHES
NOM MAX
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAW56LT1/D
4
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