Page 1
BAV70L, SBAV70L
s
l
l
Dual Switching Diode
Common Cathode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage V
Forward Current I
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
Non−Repetitive Peak Forward Current
(Square Wave, T
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 s
= 25°C prior to surge)
J
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol Value Unit
stg
100 V
200 mA
1.5 A
31
16
10
4.5
2.5
1.0
0.5
225
1.8mWmW/°C
556 °C/W
300
2.4mWmW/°C
417 °C/W
−55 to
+150
A
°C
I
FRM
I
FSM
P
R
P
R
R
F
D
q
JA
D
q
JA
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SOT−23 (TO−236)
CASE 318
STYLE 9
ANODE
1
3
CATHODE
2
ANODE
MARKING DIAGRAM
A4 M G
G
1
A4 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
BAV70LT1G SOT−23
(Pb−Free)
SBAV70LT1G SOT−23
(Pb−Free)
BAV70LT3G SOT−23
(Pb−Free)
SBAV70LT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Ree
10,000 / Tape & Ree
†
© Semiconductor Components Industries, LLC, 1994
September, 2018 − Rev. 13
1 Publication Order Number:
BAV70LT1/D
Page 2
BAV70L, SBAV70L
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage
= 100 mA)
(I
(BR)
Reverse Voltage Leakage Current (Note 3)
(V
= 25 V, TJ = 150°C)
R
(VR = 100 V)
(VR = 70 V, TJ = 150°C)
Diode Capacitance
(V
= 0 V, f = 1.0 MHz)
R
Forward Voltage
(I
= 1.0 mA)
F
(IF = 10 mA)
(IF = 50 mA)
(I
= 150 mA)
F
Reverse Recovery Time RL = 100 W
(I
= IR = 10 mA, I
F
= 1.0 mA) (Figure 1)
R(REC)
= 25°C unless otherwise noted) (Each Diode)
A
Symbol Min Max Unit
V
(BR)
I
R
C
V
t
rr
100 −
−
−
−
D
F
− 1.5
−
−
−
−
60
1.0
100
715
855
1000
1250
− 6.0
V
mA
pF
mV
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while second diode is unbiased.
820
W
I
+10 V
2.0 k
100 mH
t
t
r
I
0.1 mF
F
p
10%
t
F
t
rr
t
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
90%
50 W INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
V
R
is equal to 10 mA.
R(peak)
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
= 1.0 mA
i
I
R
R(REC)
OUTPUT PULSE
= IR = 10 mA; MEASURED
(I
F
at i
= 1.0 mA)
R(REC)
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2
Page 3
BAV70L, SBAV70L
Curves Applicable to Each Anode
I
, FORWARD CURRENT (mA)
0
100
TA = 125°C
10
1
0.1
F
0.01
TA = 55°C
TA = 25°C
TA = 150°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TA = 85°C
V
, FORWARD VOLTAGE (V)
F
TA = −40°C
TA = −55°C
Figure 2. Forward Voltage Figure 3. Leakage Current
0.6
0.58
0.56
0.54
10
TA = 150°C
1.0
0.1
0.01
, REVERSE CURRENT (mA)
R
I
0.001
0 1020304050607
VF, REVERSE VOLTAGE (V)
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
0.52
, DIODE CAPACITANCE (pF)
0.5
d
C
0.48
012345678
V
, REVERSE VOLTAGE (V)
R
Figure 4. Capacitance
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3
Page 4
BAV70L, SBAV70L
P
al
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
D
0.25
3
E
1
2
H
E
T
L
3X
b
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
L1
H
E
STYLE 9:
PIN 1. ANODE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.027
2.10 2.40 2.64 0.083 0.094 0.104
0 −−− 10 0 −−− 10T°°°°
2. ANODE
3. CATHODE
INCHES
NOM MAX
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAV70LT1/D
4
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